Orlando Auciello

 Abstract

This Talk will focus on describing fundamental/applied materials science and engineering performed to develop new generation of transformational multifunctional films (coating), involving physical/chemical/ mechanical/electronics/MEMS/NEMS/biomedical phenomena enabling transformational new generations of memories, high-k dielectric films integrated with silicon, diamond and biomedical devices, as described below Auciello et al. pioneered RuO2 film (US Patent #5,555,486 (1996)) as first conducting oxide electrode for Ferroelectric-Random-Access-Memories (FeRAMS-), eliminating 30-year-old problem of polarization fatigue in Pt/PbZrxTi1-xO3 (PZT)/Pt-based FeRAMs, via oxygen vacancies at Pt/ferroelectric films interface, controlled by RuO2 electrodes, enabling commercial PZT films-based FeRAMs (Fujitsu/TI use Oxide/PZT/Oxide-based FeRAMs). Auciello contributed also to R&D on novel ferroelectric SrBi2Ta2O9 (SBT) films developed by Symetrix Corp, producing FeRAMs without polarization fatigue with SBT layers controlling oxygen vacancies at SBT/Pt interface) (Panasonic, Toshiba commercialize SBT-FeRAMs).

Auciello collaborated with Paz de Araujo (Founder of Symetrix), who developed a material, using sol gel synthesis to produce a memory device named Correlated Electron Resistive Random Access Memorie (CeRAM).

Auciello developed an ALD process to synthesize thin films of the material for CeRAMS.

Auciello pioneered R&D on unique multifunctional TiAl alloy films, as oxygen diffusion barrier. The TiAl barrier film are used to integrate piezoelectric films with novel multifunctional ultrananocrystalline diamond (UNCD) films, to develop transformational piezo-actuated UNCD-MEMS devices with highest performance demonstrated today. The TiAl alloys in TiAlOx films exhibit higher high-dielectric constant (30-35) than HfO2, and in fransformational TiOx/A2O3 nanolaminates exhibit super-high dielectric constant (~1000) to replace SiO2 in next generations nanoscale CMOS devices and produce super- capacitors for energy storge.

Biography:

About the speaker

 Ph.D. in Physics, Institute Balseiro (Argentina)

 Former positions at: McMaster University, University of Toronto, NC State, Argonne National Lab

 33 books, 500+ articles, 26 patents, 7 R&D 100 Awards

 Past President – Materials Research Society (MRS)

 Pioneer in UNCD commercial devices, biomedical implants, and diamond microelectronics

Address:University of Texas-Dallas, , Materials Science/Engineering and Bioengineering, Richardson, Texas, United States, 75080