Materials Science - Film Growth Development for Memory and Energy Technologies

#ThinFilms #EDS #Memory #EnergyStorage
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Talk highlights

 Development of multifunctional thin films for non-volatile memories and energy storage

 RuO-based FeRAMs and CeRAMs with reduced polarization fatigue

 Integration of ultrananocrystalline diamond (UNCD) with advanced dielectrics for MEMS/NEMS

 TiAl and nanolaminate films with giant dielectric constants (k 1000) for supercapacitors

 Fabrication of diamond MOSFETs using high-k dielectrics and surface-engineered diamond



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  • Ingram School of Engineering
  • 327 W Woods Street
  • San Marcos, Texas
  • United States 78666
  • Building: INGR
  • Room Number: INGR 3-102

  • Contact Event Host
  • Haque, Ariful  - -  ahaque@txstate.edu

  • Co-sponsored by Electronic Materials Committee - IEEE Electron Devices Society
  • Starts 10 June 2025 04:00 AM UTC
  • Ends 10 June 2025 11:28 PM UTC
  • No Admission Charge


  Speakers

Orlando Auciello

Topic:

Materials Science / Film Growth Process /Technology Development for Film- Based Non-Volatile Memory Devices, Super High-

 Abstract

This Talk will focus on describing fundamental/applied materials science and engineering performed to develop new generation of transformational multifunctional films (coating), involving physical/chemical/ mechanical/electronics/MEMS/NEMS/biomedical phenomena enabling transformational new generations of memories, high-k dielectric films integrated with silicon, diamond and biomedical devices, as described below Auciello et al. pioneered RuO2 film (US Patent #5,555,486 (1996)) as first conducting oxide electrode for Ferroelectric-Random-Access-Memories (FeRAMS-), eliminating 30-year-old problem of polarization fatigue in Pt/PbZrxTi1-xO3 (PZT)/Pt-based FeRAMs, via oxygen vacancies at Pt/ferroelectric films interface, controlled by RuO2 electrodes, enabling commercial PZT films-based FeRAMs (Fujitsu/TI use Oxide/PZT/Oxide-based FeRAMs). Auciello contributed also to R&D on novel ferroelectric SrBi2Ta2O9 (SBT) films developed by Symetrix Corp, producing FeRAMs without polarization fatigue with SBT layers controlling oxygen vacancies at SBT/Pt interface) (Panasonic, Toshiba commercialize SBT-FeRAMs).

Auciello collaborated with Paz de Araujo (Founder of Symetrix), who developed a material, using sol gel synthesis to produce a memory device named Correlated Electron Resistive Random Access Memorie (CeRAM).

Auciello developed an ALD process to synthesize thin films of the material for CeRAMS.

Auciello pioneered R&D on unique multifunctional TiAl alloy films, as oxygen diffusion barrier. The TiAl barrier film are used to integrate piezoelectric films with novel multifunctional ultrananocrystalline diamond (UNCD) films, to develop transformational piezo-actuated UNCD-MEMS devices with highest performance demonstrated today. The TiAl alloys in TiAlOx films exhibit higher high-dielectric constant (30-35) than HfO2, and in fransformational TiOx/A2O3 nanolaminates exhibit super-high dielectric constant (~1000) to replace SiO2 in next generations nanoscale CMOS devices and produce super- capacitors for energy storge.

Biography:

About the speaker

 Ph.D. in Physics, Institute Balseiro (Argentina)

 Former positions at: McMaster University, University of Toronto, NC State, Argonne National Lab

 33 books, 500+ articles, 26 patents, 7 R&D 100 Awards

 Past President – Materials Research Society (MRS)

 Pioneer in UNCD commercial devices, biomedical implants, and diamond microelectronics

Address:University of Texas-Dallas, , Materials Science/Engineering and Bioengineering, Richardson, Texas, United States, 75080





Agenda

4:00  PM - - Introductions and Resume of Dr. Auciello

4:10 - - - Technical Talk:   Thin Film Development

4:45 - - - Q & A

5:00 - - - Adjourn