Daniel M Fleetwood

Abstract: 60 years ago, Gordon Moore postulated that the number of components in an integrated circuit would double every few years. This trend still holds, making it one of the longest, sustained geometric progressions in the history of the industrialized world, enabling revolutions in computing and in virtually every aspect of technology that is enabled or enhanced by computing. Transistor dimensions have decreased from tens of microns to ~3 nanometers over this time period. In this presentation, we will examine the evolution of Moore’s Law size and voltage scaling of transistors and integrated circuits and their effects on the vulnerability of microelectronics to ionizing radiation effects in near-Earth space and terrestrial applications. Total-ionizing dose effects and single-event effects will be the primary focus of the presentation, with a brief discussion on displacement damage in future highly scaled integrated circuit technologies.

Biography:

Dan Fleetwood received his PhD in Physics from Purdue University in 1984. He joined Sandia National Laboratories in Albuquerque, New Mexico, in 1984, and was named a Distinguished Member of the Technical Staff in the Radiation Technology and Assurance Department in 1990. In 1999 he accepted a position as Professor of Electrical Engineering at Vanderbilt University in Nashville, Tennessee. In July 2001 he was appointed Associate Dean for Research of the Vanderbilt School of Engineering, and from June 1, 2003, through June 30, 2020, he served as Chair of the Vanderbilt Electrical Engineering and Computer Science Department. Since 2009, he is appointed to the Landreth Chair of Engineering. His research focuses primarily on the radiation response and reliability of microelectronic materials and devices, and defects in microelectronic devices and materials. He has performed foundational studies using low-frequency noise and thermally stimulated current techniques to characterize and identify defects and impurities in a wide range of semiconducting and insulating materials. He also has contributed to several international standards for assessing and assuring the radiation response of microelectronic materials, devices, and integrated circuits for use in space environments. In 2009 he received the IEEE NPSS Merit Award, which is the pre-eminent lifetime achievement award of the IEEE Nuclear and Plasma Sciences Society (NPSS). He is currently Senior Editor, Radiation Effects, of the IEEE Transactions on Nuclear Science and Chair of the Distinguished Lecturers Committee of the IEEE NPSS. He is a Life Fellow of the IEEE and a Fellow of the American Physical Society, the American Association of the Advancement of Science, and the National Academy of Inventors.

Address:Olin H. Landreth Professor of Engineering, Professor of Electrical and Computer Engineering, Professor of Physics Vanderbilt Un,