Dr. Bin Zhao

Biography:

Dr. Bin Zhao received his Ph.D. degree from California Institute of Technology and has held engineering and management positions at SEMATECH, Rockwell, Conexant, Skyworks, Freescale, Fairchild, and ON Semiconductor. He has worked on advanced VLSI technology development and design implementation of analog/mixed-signal, power management, and RF IC products. In 1997, he developed the industry’s first Cu/SiOCH-based low-k (k<3) dual-damascene interconnect, now widely used in today’s IC products. He has served as the CEO of Everbright Envirotech Ltd and the President of the Everbright Green Technology Innovation Research Institute. He has authored and coauthored more than 200 journal publications and conference presentations, has written three book chapters, and holds more than 100 issued patents. He has held many leadership roles, including Founding Co-Chair of the Working Group of RF/Analog/Mixed-Signal Technologies for Wireless Communications in the International Technology Roadmap for Semiconductors (ITRS), Chair of the Editorial Steering Committee for the IEEE Journal of Microelectromechanical Systems (J-MEMS), Chair of the IEEE Johnson Technology Award Committee, and Chair of the IEEE Conference Committee. Additionally, he has served on the IEEE Technical Activities Board, IEEE Publications Services and Products Board, and IEEE IoT Activities Board. Currently, Dr. Zhao serves as President of the IEEE Electron Devices Society, and he is an IEEE Fellow.

Dr. Sayeef Salahuddin of University of California, Berkeley

Biography:

Dr. Sayeef Salahuddin is the TSMC Distinguished Professor of Electrical Engineering and Computer Sciences at the University of California, Berkeley. He received his B.Sc. in Electrical and Electronic Engineering from BUET in 2003 and his Ph.D. in Electrical and Computer Engineering from Purdue University in 2007. He joined the UC Berkeley faculty in 2008. His research centers on novel device physics for low-power electronic and spintronic devices, with a particular focus on utilizing interacting systems for energy-efficient switching. This work led to the groundbreaking discovery of Negative Capacitance Transistors, which enable sub kT/q operation—pushing the boundaries of energy efficiency in modern electronics.

Dr. Salahuddin has received several prestigious awards, including the Presidential Early Career Award for Scientists and Engineers (PECASE), the NSF CAREER Award, the IEEE Nanotechnology Early Career Award, and Young Investigator Awards from both the Air Force Office of Scientific Research (AFOSR) and the Army Research Office (ARO). His work has also earned best paper awards from IEEE Transactions on VLSI Systems and the VLSI-TSA conference. Two of his papers were recognized among the top 50 most notable publications in Applied Physics Letters between 2009 and 2012.

He is a fellow of the IEEE and the American Physical Society (APS), and serves as co-director of both the Berkeley Device Modeling Center and the Berkeley Center for Negative Capacitance Transistors. He has also contributed to the field through editorial service with IEEE Electron Devices Letters and as chair of the IEEE Electron Devices Society Committee on Nanotechnology.

Address:515 Sutardja Dai Hall,

Dr. Muhammad Mustafa Hussain of Purdue University

Biography:

Muhammad Mustafa Hussain (Fellow, IEEE) received the Ph.D. degree in electrical and computer engineering from The University of Texas at Austin, Austin, TX, USA, in 2005. He is currently a Professor of electrical and computer engineering with Purdue University, West Lafayette, IN, USA. Before Purdue, he was a Professor of EE at King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia, and a Professor of EECS with the University of California at Berkeley, Berkeley, CA, USA. He was also a Program Manager of the Emerging Technology Program at SEMATECH, Inc., Austin. His research interest is to expand the horizon of complementary metal–oxide–semiconductor (CMOS) electronics and technology for futuristic applications. Prof. Hussain is the American Physical Society (APS), the Institute of Physics, U.K., and the Institute of Nanotechnology, U.K.

Email:

Address:Purdue University,Elmore Family School of Electrical and Computer Engineering, Materials and Electrical Engineering Building, West Lafayette, Indiana