FET100 Celebration: Reliability Mechanism of GaN-based Power Electronic Devices Based on Deep Level Transient Spectroscopy
Date and Time: 19th September, 2025，9:30 AM – 11:00 AM (Beijing Time)
Location: CB1053, Xi’an Jiaotong-Liverpool University (XJTLU)
Host: Dr. Wen Liu, Chair of IEEE CASS-EDS Joint Chapter Suzhou and the executive director of ASRC
Title: Reliability Mechanism of GaN-based Power Electronic Devices Based on Deep Level Transient Spectroscopy
Speaker: Sen Huang, Research Fellow
Keynote Presentation: Unraveling Defect Mechanisms in GaN Power Devices
Dr. Sen Huang delivered a keynote speech titled “Reliability Mechanism of GaN-based Power Electronic Devices Based on Deep Level Transient Spectroscopy.” He began by highlighting the fundamental challenges in GaN material growth. Unlike silicon, GaN wide-bandgap semiconductors are typically grown via heteroepitaxy on foreign substrates such as silicon (Si), silicon carbide (SiC), or sapphire. This process introduces a high density of defects, including threading dislocations, point defects, interface states, and amorphous dielectric defects, which lead to critical issues such as current collapse and leakage, thereby limiting the application of GaN devices in high-voltage and high-power scenarios.
Dr. Huang then introduced a novel deep level transient spectroscopy (DLTS) method developed by his research team, which enables systematic characterization of both intrinsic and radiation-induced defects in GaN-based power devices. By combining these experimental results with first-principles calculations, his team has established a physical model that directly links material defects to device degradation behavior. This model provides theoretical support for optimizing material growth processes and interface control technologies, offering valuable insights for the development of more reliable GaN power devices.
Toward Future Collaborations in Wide-Bandgap Semiconductor Research
The seminar provided a platform for in-depth discussion on defect characterization and reliability in GaN devices. Attendees expressed strong interest in further collaboration with CAS and other research institutions to advance the understanding and application of wide-bandgap semiconductors.
XJTLU remains committed to fostering academic and industrial partnerships in the field of semiconductor technology, supporting the growth and advancement of next-generation electronics industry.
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- Xi’an Jiaotong-Liverpool University (XJTLU)
- 111 Ren’ai Road
- Suzhou, Jiangsu
- China 215123
- Building: CB1053
- Contact Event Host
- Co-sponsored by XJTLU Advanced Semiconductor Research Center (ASRC)
- Starts 17 September 2025 03:31 AM UTC
- Ends 19 September 2025 12:30 AM UTC
- No Admission Charge
Speakers
Dr. Sen Huang
Reliability Mechanism of GaN-based Power Electronic Devices Based on Deep Level Transient Spectroscopy
Abstract: Unlike traditional silicon (Si) semiconductors, gallium nitride (GaN) wide-bandgap semiconductors are difficult to obtain through single crystal pulling and purification. Currently, they are mainly grown via heteroepitaxy on silicon (Si), silicon carbide (SiC), or sapphire substrates. This growth method introduces a large number of defects, such as threading dislocations, point defects, interface states, and amorphous dielectric defects. These defects cause issues like current collapse and leakage in GaN-based power electronic devices, limiting their application in high-voltage and high-power fields. Based on a new deep level transient spectroscopy (DLTS) method developed by the research team, this study systematically characterizes the intrinsic and radiation-induced defects in GaN-based power devices. Combined with first-principles calculations, a physical model linking material defects to device degradation is established. This research provides theoretical support for the optimization of material growth processes and the regulation of interface technologies.
Biography:
Sen Huang is a Research Fellow at the Institute of Microelectronics, Chinese Academy of Sciences (CAS), a Ph.D. advisor at the University of Chinese Academy of Sciences, and a Senior Member of IEEE. He has received several prestigious talent program supports, including the National Natural Science Foundation of China's Excellent Young Scientists Fund and the Excellent Member Award of the Youth Innovation Promotion Association of CAS. He earned his Ph.D. from Peking University in 2009 and has long been devoted to the research of high-performance GaN-based power device technology and physics. To date, he has published over 120 papers in leading journals such as IEEE EDL and IEEE TED, as well as top international conferences in the microelectronics field including IEDM and ISPSD. He has applied for more than 60 patents, some of which have been adopted by industry. In 2022, he received the Second Prize of the Natural Science Award from the Chinese Institute of Electronics and the Second Prize of the Technological Invention Award from the China Instrument and Control Society.