PhD. Kobayashi of Solid State Electronics Laboratory, Simón Bolívar University, Caracas, Venezuela

"HeteroEpitaxy of II-VI related semiconductors"

presented by

Masakazu Kobayashi , PhD.

Waseda University, Japan

Abstract:

In 2014, Nobel Prize winners are "Japanese" researchers of GaN blue Light emitting diodes.  Before the success of GaN laser diodes, II-VI laser diode study was extremely highlighted peaking at around 1991. The success in Blue-Green laser diodes by II-VI semiconductor was an important benchmark to the success of the GaN laser diode as they are good competitors.  The problem associated with the lack of appropriate substrates, difficulties of the electrical property control were widely explored at that time, and solutions were achieved step by step. Those benchmarks to the progress of II-VI laser diodes, and the topics after the peak of the II-VI semiconductor research will be described. The x-ray diffraction method is the traditional method. The technique was modified from time to time to characterize materials of interest. Omega scan, Phi scan and reciprocal space mapping are so far well understood by the researchers of thin films. Because of the expanded material choice, the epilayer orientation and the crystal structure with respect to the selection of the substrate material are carefully considered now. The pole figure measurement is a traditional method but it is a very powerful method to focus on the characterization for this purpose. The basic concepts will be discussed along with several examples of how this measurement provides useful information for the characterization of the hetero-epitaxy system including II-VI related semiconductors.

Biography:

Masakazu Kobayashi, PhD.

Address:Japan