The fundamentals of MOS Transistor for undergraduate students

#FET100 #semiconductors #devices
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In this talk the fundamentals of MOS transistor physics and models will be presented. The talk is intended to provide the basic principles of MOS device physics and models to undergraduate students who have no previous acquaintance with MOS technology and MOS devices.
In the first part of the talk, the intuitive behavior of the MOS capacitor will be described, including the different regions of operation and the definition of the main parameters. In the second part, the MOS transistor and its basic principles of operations will be described. Current-voltage analytical models of increasing complexity will finally be discussed.


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  • Via dell'Università 50
  • cesena, Emilia-Romagna
  • Italy
  • Room Number: Aula 2.1
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  Speakers

Enrico Sangiorgi of University of Bologna

Biography:

Enrico Sangiorgi is professor of Electronics the University of Bologna and Director Emeritus of the Sinano Institute. He has been a Visiting Scientist at Stanford University and Bell Laboratories. He is a member of the European Chips Joint Undertaking Governing Board and of the Aeneas Supervisory Board. He is a member of the Supervisory Board of the Foundation Chips-IT, the Italian national research center on IC design. From 2005 to 2011 he has been the first Director of Consorzio Nazionale Interuniversitario per la Nanoeletronica (IU.NET), an organization grouping several University Groups and today one of the key Semiconductor R&D players in Europe. From 2015 to 2021 he has been Vice Rector for Teaching and Education at the University of Bologna.
Enrico Sangiorgi has been Editor of IEEE Electron Device Letters for 15 years (1994 to 2009), Editor (2014-2019), Editor-in-Chief (2020-2024) of the Journal of the Electron Device Society, and currently Editor of the IEEE Electron Devices Reviews.
His research covers the physics, characterization, modeling, and fabrication of solid-state devices and integrated circuits. He has been working on several aspects of device scaling, its technological, physical, and functional limits, as well as device reliability for silicon CMOS and bipolar transistors. To tackle and eventually overcome the hurdles of device scaling, down to the ultimate physical and technological limits, he has
devised and developed several original concepts and methods in the characterization and modeling of nano-scale silicon devices.
Enrico Sangiorgi supervised more than 20 Ph.D. students, he has coauthored 47 papers published on the Transactions on Electron Devices, 18 papers published on Electron Device Letters and 34 papers presented at the International Electron Devices Meeting (IEDM), and overall more than 280 papers in major journals and conference proceedings. His publications received more than 4,600 citations attaining a h-index of 34.
Enrico Sangiorgi is Distinguished Lecturer and Fellow of the IEEE (2005).