Mr. Shuai Zhou

Addressing the structural complexity and diversified failure modes of 3D packaged memory, this study aims to transcend the limitations of traditional empirical evaluation by establishing a systematic methodology for extreme capability assessment based on a "multi-stress, multi-mechanism, cross-scale" framework. Specifically, a multi-stress-mechanism mapping analysis is first conducted to systematically identify the dominant failure mechanisms under individual and coupled electrical, thermal, and hygrothermal stresses, based on the device's structural characteristics. This establishes clear mapping rules from stress input to mechanistic response, providing a theoretical basis for designing precise extreme test profiles. At the mechanism-evolution correlation level, a synergistic approach combining high-precision experimental testing with multi-physics simulation is employed to quantitatively reveal the relationship between macroscopic stresses and the evolution of microscopic damage, such as voids and cracks. Finally, at the data-model integration level, a dedicated test system is developed to achieve dynamic high-precision monitoring of performance parameters under extreme conditions. The acquired accurate degradation data is interactively validated with physical failure models, forming a closed-loop process of "analysis-simulation-testing-validation." This enables a paradigm shift from experience-based judgment to physics-driven assessment, offering a systematic solution for reliability evaluation of highly complex devices.

Biography:

Shuai Zhou is currently a Doctor of Engineering candidate at the School of Microelectronics, Tianjin University. His research focuses on the reliability of 3D packaged memory.