[Legacy Report] A Cavity Based High Power High Efficiency RF/microwave SSD Amplifier
#Dr.
#Bernard
#Cheo
#President
#Aria
#Microwave
#Systems
This talk reviews the operating principles and characteristics of a cavity based high power RF/microwave SSD amplifier technology. It utilizes a pair of resonant cavities to combine a large number (from a few to 20 or more) of power transistors without losing efficiency. It is lightweight, small footprint, and can be manufactured and maintained at unusually low cost. The basic principle can be implemented from high VHF to Ku band, using devices either Si or GaN based, whether BJT or FET. It is suitable for any class operation, including the switching mode Class-E. It is patented under the name Active RF Cavity Amplifier (ARFCA), or Active Cavity Amplifier (ACA) for brevity. Here the term active follows the convention that differentiates the active and passive circuits.
The talk will present experimental data of two selected prototypes, respectively with eight transistors for the cell phone downlink transmitter at 2.1 GHz, and with ten transistors for industrial heating at 915 MHz. Potentials in various military, telecom, and other industrial applications will be discussed.
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