100 Years of the Field Effect Transistor

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In 2025, we reached an important milestone: 100 years of the conceptualization of Field Effect Transistor (FET). The concept of the FET was first documented in a Canadian patent filed by Julius Edgar Lilienfeld on 22 October 1925. Over the past century, the developments and innovations in FET technology have enabled integrated circuits for computing, memory, communication, and countless other applications.

To celebrate this momentous occasion, the IEEE-EDS IIT Kanpur chapter organized a workshop on 19th December 2025. 


  Date and Time

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  • IIT KANPUR
  • IIT Kanpur
  • Kanpur, Uttar Pradesh
  • India 208016
  • Building: ACES Building
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  Speakers

University of Notre Dame

Topic:

Prof. Patrick Fay

Achieving the vision and promise of ubiquitous, high-performance wireless communications (e.g. 6G and beyond), as well as radar and other applications, requires significant advancements in device technologies that exceed what is readily attainable with Si CMOS.  To obtain the high bandwidths required on a mobile platform, devices offering high levels of millimeter-wave performance (i.e. low noise figure, high linearity, and high power efficiency) with low power consumption are essential.  Reconfigurability in order to support frequency-agile and compact implementations is also critical.  The unique properties of the III-N material system (e.g. polarization, LO phonon mediated electron transport) enable new approaches for designing millimeter-wave transistors for power amplifiers, low-noise amplifiers, and signal switching and routing. The integration of ferroelectrics with III-N transistors also provides opportunities for increased functional density and improved performance in signal switching and routing applications.  In this talk, recent advances in these areas will be presented. 

Biography:

Patrick Fay is a Professor in the Dept. of Electrical Engineering at the University of Notre Dame; he received a Ph.D. in electrical engineering from the University of Illinois at Urbana-Champaign in 1996.  His research focuses on the design, fabrication, and characterization of microwave and millimeter-wave electronic devices and circuits, power device design and fabrication, as well as the use of micromachining techniques for the fabrication of RF through sub-millimeter-wave packaging. Prof. Fay is a fellow of the IEEE, is an IEEE Electron Devices Society Distinguished Lecturer, and has published 11 book chapters and more than 400 articles in scientific journals and conference proceedings.