Stochastic yet Precise: Multi-Level RRAM Crossbar Arrays for In-Memory Learning, Security, and Generative AI
Emerging resistive memory technologies provide a unique opportunity to unify computation, storage, security, and data generation within a single hardware substrate. This talk introduces a comprehensive hardware platform based on multi-oxide RRAM crossbar arrays that achieves both precision for analog computing and stochasticity for intrinsic security and generative diversity. Leveraging 5-bit device-level analog programmability and reliable 4-bit array-level weight mapping, key primitives of memory-augmented neural networks (MANNs) are implemented, including convolutional encoding, locality-sensitive hashing, and RRAM-based CAM for few-shot learning with near-software accuracy. At the same time, inherent device variability is utilized as a high-entropy physical unclonable function for secure key generation and as a hardware-native randomness source that enhances the diversity and perceptual realism of StyleGAN3-generated biometric images. By integrating analog VMM, associative memory search, high-entropy randomness, and hardware-seeded generative models within the same crossbar fabric, this work demonstrates how “stochastic yet precise” memristor arrays can provide a unified foundation for edge-intelligent, secure, and data-generating systems. Controlled multi-bit programming, device-aware learning, and engineered randomness together enable a new class of memory-centric AI platforms that support inference, few-shot adaptation, PUF-based security, and high-fidelity generative AI.
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Sungjun Kim of Dongguk University
Stochastic yet Precise: Multi-Level RRAM Crossbar Arrays for In-Memory Learning, Security, and Generative AI
Biography:
Prof. Sungjun Kim is an Associate Professor in the Department of Electronic and Electrical Engineering at Dongguk University, Seoul, Republic of Korea. Before joining academia, he worked as a Senior Researcher in the Next-Generation Memory Team (Technology Development, TD) at Samsung Electronics DS Semiconductor Research Center, where he contributed to process development of phase-change RAM (PRAM) and ovonic threshold switch (OTS) selector devices for future non-volatile memory technologies. He later served as an Assistant Professor at Chungbuk National University before joining Dongguk University. He received his B.S. degree from Hanyang University in 2011 and his M.S. and Ph.D. degrees in Electrical and Computer Engineering from Seoul National University in 2013 and 2017, respectively. His research interests include emerging memory devices such as RRAM, FTJ, FeFET, DRAM/Flash, and selector technologies, as well as neuromorphic and in-memory computing systems.