Silicon Carbide Power Semiconductors: Device Modelling, Gate Drivers and Applications
Dimosthenis Peftitsis (Norwegian Univ. of Sci. and Tech., Norway)
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RDL-1: Silicon Carbide Power Semiconductors: Device Modelling, Gate Drivers and Applications
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Gaziantep Islam Science and Technology University
Department Electrical and Electronics Eng.
Speakers
Prof.Dr. Dimosthenis Peftitsis
Dimosthenis Peftitsis (Senior Member, IEEE) born in Kavala, Greece, he received the
Diploma degree (Hons.) in electrical and computer engineering from Democritus University of
Thrace, Xanthi, Greece, in 2008, and the Ph.D. degree in power electronics with the KTH Royal
Institute of Technology, Stockholm, Sweden, in 2013.
He is currently a Professor of power electronics with the Department of Electric Energy,
Norwegian University of Science and Technology (NTNU), Trondheim, Norway, where he has
been a Faculty Member since 2016. In his final year of studies, he spent six months in ABB
Corporate Research, Västerås, Sweden, writing his thesis. He was a Postdoctoral Researcher
involved in the research on SiC converters with the Department of Electrical Energy
Conversion, KTH Royal Institute of Technology (2013/14). He also worked as a Postdoctoral
Fellow with the Lab for High Power Electronics Systems, ETH Zurich, where he was involved
in dc-breakers for multiterminal HVDC systems from 2014 to 2016. He has authored or
coauthored more than 130 journal and conference papers; he is the co-author of one book
chapter and the presenter of six conference tutorials. His research interests lie in the area of
intelligent power converters design using WBG devices (e.g., SiC and GaN) including adaptive
drive circuits, dc-breaker design for MV and HVDC systems, as well as reliability assessment
and lifetime modeling of high-power semiconductor devices, including reliability of SiC power
switches. Dr. Peftitsis was a member of the Outstanding Academic Fellows Programme at
NTNU in 2019-2023, a member of the EPE International Scientific Committee in 2017-2025,
an Academic Advisor for the Power Electronic Conversion Technology Annex (PECTA) at
IEA and currently serves as the Chairman on the Norway IEEE joint Power Electronics
Society/Industry Applications Society/Industrial Electronics Society Chapter. Dr. Peftitsis has
been awarded an ERC Consolidator Grant in 2025, and he is the recipient of the Outstanding
Reviewer Award 2024 in IEEE Transactions on Power Electronics. Dr. Peftitsis is an Associate
Editor for IEEE Transactions on Power Electronics since 2024.
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| Dimosthenis Peftitsis (Norwegian Univ. of Sci. and Tech., Norway) | 413.99 KiB | |
| Dimosthenis Peftitsis | Silicon Carbide Power Semiconductors: Device Modelling, Gate Drivers and Applications | 421.70 KiB |