Xin Wan of Hangzhou Aurora Semiconductor Co., Ltd.

Abstract: This report first briefly introduces the basic knowledge of power MOSFETs, including device structure, main parameters, and reliability issues. Then, an introduction will be given to the satellite power system and the anti-radiation power MOSFETs used in it, including the architecture of the satellite power system, the anti-radiation capability requirements of power MOSFETs used in space environments, and the current situation of major anti-radiation power MOSFET products at home and abroad. Finally, based on the development trends of low Earth orbit satellite constellations, especially future computing power satellites, we will discuss the cutting-edge technological needs of the industry and the fundamental technical issues that urgently need to be addressed.

Biography:

Xin Wan is a Senior Engineer, General Manager of Hangzhou Aurora Semiconductor Co., Ltd., and Executive Director of the Research Center for High Reliability Power Semiconductors at the Yangtze Delta Region Institute of Tsinghua University, Zhejiang. He received his B.S. in Microelectronics from Fudan University in 2008, his M.S. in Microelectronics and Solid State Electronics from Tsinghua University in 2011, and his Ph.D. in Nuclear Science and Technology from Tsinghua University in 2016. Since 2009 he has worked on the research and industrialization of radiation hardened power MOSFETs. He leads one project under the Zhejiang Leading Goose Program, is a core participant in a defense advanced research project of the Equipment Development Department of the Central Military Commission, and founded Hangzhou Aurora Semiconductor Co., Ltd., where he has achieved volume production of radiation hardened power MOSFETs. He and his team have received the Gold Award of the China Youth Innovation and Entrepreneurship Competition and the Silver Award of the Tsinghua Alumni Three C Competition.