[Legacy Report] GaN-on-SiC HEMT Transistors and MMICs Enter the Mainstream

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GaN HEMT Transistor Structures
• High Power Densities – Blessings or Curses?
• Thermal Management – Modeling and Measurement
– CW and Pulsed Device Operations
– Self-Heating Large-Signal Models
• Wideband General Purpose Amplifiers
• Linear and Efficient Telecommunication Amplifiers
– Doherty and Envelope Tracking Approaches
• GaN HEMT MMICs
• Packaging
– Improvements to device structures and package materials
• Device Reliability
• Trends – Applications, Higher Frequencies and new devices
Ray Pengelly gained his BSc and MSc degrees from Southampton University, England in 1969 and 1973 respectively. Ray worked for the Plessey Company from 1969 to 1986. In 1986 Tachonics Corporation employed Ray, where he was Executive Director of Design for analog and microwave GaAs MMICs. He joined Compact Software in 1989 as Vice President of Marketing and Sales. Starting in 1993, Raytheon Commercial Electronics employed Ray in a number of positions including MMIC Design and Product Development Manager and Director of Advanced Products and New Techniques. Since August 1999, Ray has been employed by Cree Inc. He is presently responsible for the strategic business development of RF and wireless products and applications using GaN HEMT transistors and MMICs. Ray has written over 130 technical papers, 4 technical books, holds 14 patents, is a Fellow of the IET and a Fellow of the IEEE.

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