[Legacy Report] Power Amplifiers and MEMs

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Lecture 1: Novel Device Architecture for Silicon-based Power Amplifiers at Millimeter-Wave

Our architecture reliably operates and has been implemented using 120 ľm SiGe technology at 2.4 GHz and 30 GHz. It allows for very large output voltage swings, leading to high output power with high efficiency when used in a power amplifier design. It is our hope that the reproducibility of our design can be integrated into new devices in a cost-effective manner to ensure their continued proliferation and the unlocking of the next generation millimeter-wave wireless technologies.

Lecture 2: Piezo-MEMS Enabled, Low Power Mechanical Logic

MEMS devices offer an alternative to solid-state components for ultra low power, digital computation. These devices can have extremely sharp, less than 1-mV/dec, turn-on I-V slopes, and the use of a body bias has been used to demonstrate switching voltages under 200-mV. For those reasons, a design, fabrication and characterization effort, intended to develop a complete MEMS digital library and design flow, has been undertaken to enable ultra low power microcontrollers. Current generation components have a power consumption advantage over bulk CMOS processes at lower frequencies. Furthermore, future scaling of the actuator and contact gap is predicted to reduce dynamic energy consumption to under 10-aJ, with static power scaling similarly.

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