Future RF Circuit Design: CMOS or SiGe HBT
#CMOS
#or
#SiGe
#HBT
IEEE Pikes Peak ED/CAS Society Chapter presents--
Future RF Circuit Design: CMOS or SiGe HBT
RF Circuits can be designed by CMOS, SiGe HBT or Si BJT technologies. Dr. Adam Pawlikiewicz will compare the advantages and disadvantages of RF circuits designed with these technologies for wireless communications applications and discuss the possible dominant technology for future.
Date and Time
Location
Hosts
Registration
- Date: 05 Dec 2011
- Time: 01:40 PM to 02:55 PM
- All times are (UTC-07:00) Mountain Time (US & Canada)
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- University of Colorado at Colorado Springs
- Colorado Springs, Colorado
- United States 80918
- Building: ENG 105, Engineering Building
- Contact Event Host
- Co-sponsored by Prof. T.S. Kalkur
- Starts 28 November 2011 10:00 PM
- Ends 05 December 2011 02:00 PM
- All times are (UTC-07:00) Mountain Time (US & Canada)
- No Admission Charge
Speakers
Dr. Adam H. Pawlikiewicz
Topic:
Future RF Circuit Design: CMOS or SiGe HBT
Biography: Dr. Adam Pawlikiewicz got his Ph.D. from University of Minnesota in 1986 under Prof. Van der Ziel. He has worked in semiconductor industry over 20 years in CMOS and BJT technologies. At Atmel Corporation, since 1997, he is responsible in developing device technologies for wireless applications. Prior to that, he worked at United Techologies Microelectronics Center as a principal device engineer, Ford Motor Company as a device engineer and Energy Conversion device as a senior device engineer.
Address:Colorado, United States
Dr. Adam H. Pawlikiewicz
Topic:
Future RF Circuit Design: CMOS or SiGe HBT
Biography:
Address:Colorado, United States