Xiangfeng Duan of UCLA

Two-dimensional (2D) semiconductors have attracted tremendous interest as atomically thin channels for continued transistor scaling. However, despite many proof-of-concept demonstrations, the full potential of 2D transistors remains elusive. To this end, the fundamental merits and technological limits of 2D transistors need a critical assessment, reality check, and objective projection.

In this talk, I will briefly review the promises and the current status of 2D transistors, and highlight the widely used device parameters (e.g., carrier mobility, contact resistance) could be frequently misestimated or misinterpreted, and may not be the most reliable performance metrics for benchmarking 2D transistors.

We suggest the saturation or on-state current density, especially in the short channel limit, could provide a more reliable measure for assessing the potential of diverse 2D semiconductors, and should be applied for cross-checking different studies, especially when milestone performance metrics are claimed.

Next I summarize the critical technical challenges and current status in optimizing the channel, contacts, dielectric, and substrate interfaces; and outline the potential pathways to push the limit of 2D transistors and the emerging opportunities arising in these atomically thin semiconductors. In particular, for new-term opportunities, I will introduce a unique design of van der Waals thin films with unprecedented combination of electronic performance and mechanical stretchability for adaptable electronic membranes.

Biography:

Xiangfeng Duan received his B.S. Degree from University of Science and Technology of China in 1997, and Ph.D. degree from Harvard University in 2002. From 2002-2008, he was a Founding Scientist responsible for advanced technology development at Nanosys Inc., a nanotechnology startup founded based partly on his doctoral research. Dr. Duan joined UCLA with a Howard Reiss Career Development Chair in 2008, and was promoted to Associate Professor in 2012 and Full Professor in 2013. His research interest includes nanoscale materials, devices and their applications in future electronic and energy technologies.

He has published over 300 papers with over 90,000 citations, and holds >50 issued US patents. Dr. Duan has received many awards for his pioneering research in nanoscale science and technology, including MIT Technology Review Top-100 Innovator Award, NIH Director’s New Innovator Award, NSF Career Award, Alpha Chi Sigma Glen T. Seaborg Award, Herbert Newby McCoy Research Award, US Presidential Early Career Award for Scientists and Engineers (PECASE), ONR Young Investigator Award, DOE Early Career Scientist Award, Human Frontier Science Program Young Investigator Award, Dupont Young Professor, Journal of Materials Chemistry Lectureship, International Union of Materials Research Society and Singapore Materials Research Society Young Researcher Award, the Beilby Medal and Prize, the Nano Korea Award, International Society of Electrochemistry Zhao-Wu Tian Prize for Energy Electrochemistry, Science China Materials Innovation Award, AIP Horizons Lectureship, NanoMaterials Science Young Scientist Award, Materials Research Society Middle Career Researcher Award, International Union of Materials Research Society Frontier Materials Young Scientists Award, IEEE Nanotechnology Council Distinguished Lectureship, and most recently the IEEE Pioneer Award in Nanotechnology. He is currently an elected Fellow of Royal Society of Chemistry and Fellow of American Association for the Advancement of Science.

URL: http://xduan.chem.ucla.edu

Address:UCLA, , Los Angeles, Oregon, United States