FET100 Celebration Activity: Colloquium on Industry–Academia–Research Collaborative Innovation in GaN Technology
This half-day event focuses on collaborative innovation in GaN-based FET technologies, showcasing the latest advancements and industrial applications of GaN HEMTs. It brings together academic researchers, industry leaders, and students to foster cross-sector exchange and highlight the societal and technical impacts of FET-based technologies.
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- Xi’an Jiaotong-Liverpool University (XJTLU)
- 111 Ren’ai Road
- Suzhou, Jiangsu
- China 215123
- Building: IBSS Building
- Room Number: BS4114
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- Co-sponsored by XJTLU Advanced Semiconductor Research Center
- Starts 07 July 2025 04:00 PM UTC
- Ends 10 July 2025 04:00 PM UTC
- No Admission Charge
Speakers
Professor Dunjun Chen of Nanjing University
Research on Gate Dielectric Technology and Reliability Mechanism of GaN-based Power Devices
AlGaN/GaN high-electron-mobility transistor (HEMT) has emerged as ideal candidate for next-generation power electronics, owing to their exceptional capabilities in high-voltage operation, fast switching speed, and low on-resistance, which can greatly improve power conversion efficiency, mixed output power density, and reduce system power loss. The gate dielectric has a significant impact on the performance and reliability of power devices. This report will focus on the influence of p-NiO gate dielectric, ultrahigh-k BaTiO3 gate dielectric, SiN in-situ sacrificial layer, and composite terminal field plate on the performance and reliability of GaN-based HEMT devices, including breakdown voltage, threshold voltage instability, dynamic on-resistance degradation, etc. The modulation of the internal electric field distribution in the device, the dynamics of carrier capture and de-capture processes, the physical mechanism of threshold drift, and the dynamic degradation mechanism of the device will be analyzed by combining step stress, pulse testing, transient current spectrum, electroluminescence spectrum, and temperature-dependent testing methods.
Dr. Shuilin Tian of Innoscience Technology Co., Ltd
High-frequency Application of GaN Power Device
This presentation discusses the applications of gallium nitride (GaN) power devices in high-frequency power electronics, and showcases the value of gallium nitride from the perspective of industrial applications for the audience. After a brief introduction to gallium nitride devices and Innoscience Technology Co., Ltd., five application examples will be used to demonstrate the high-frequency applications of gallium nitride devices, covering consumer applications (USB PD 3.1 applications, power supplies for beauty devices), data centers (48V—12V IBC converters), and automotive applications (on-board 48V—12V bidirectional converters). The switching frequencies range from 250kHz to 10MHz, and the power levels span from several tens of watts to 2 kilowatts. The application cases demonstrate the performance advantages of gallium nitride devices over traditional silicon devices in terms of efficiency and power density.
Associate Professor Jiangmin Gu of Xi’an Jiaotong-Liverpool University (XJTLU)
Sub-Block Design for Monolithic PMIC Based on GaN HEMT Technology
Gallium nitride (GaN) has unique properties such as high energy gap, high electron mobility, high thermal conductivity and high breakdown electric field. This provides GaN broad application prospects in many high-tech application scenarios: power electronics such as electric vehicles, renewable energy, data center power supplies, industrial systems, adopts GaN devices to achieve higher voltage and frequency operation and improve conversion efficiency. GaN also demonstrates potential in lidar, augmented reality, robotics, medical electronics, and radiation-resistant aerospace applications. This seminar introduces the background knowledge and characteristics of GaN integrated circuit technology, as well as the design advantages of full GaN integrated circuits in application of switching power management systems. The seminar lists several challenges that need to be urgently addressed to achieve low-power, high-integration full GaN circuit design. At the same time, the seminar demonstrates the potential of full GaN integrated circuit technology through modules such as reference source, temperature sensor, over-temperature protection circuit and overvoltage protection circuit, etc.
Agenda
The colloquium will begin at 09:00 with sign-in and a brief welcome address at 09:10. At 09:20, Prof. Dunjun Chen (Vice Dean, Nanjing University) will deliver the first keynote on Gate Dielectric Technology and Reliability Mechanisms in GaN Power Devices. A tea break and student poster session will follow at 10:00. At 10:40, Dr. Shuilin Tian (Senior Director, Innoscience Technology) will present the second keynote on High-Frequency Applications of GaN Power Devices in real-world industry contexts. The third keynote at 11:20 will be given by Dr. Jiangmin Gu (Associate Professor, XJTLU), focusing on Sub-Block Design for Monolithic GaN-Based PMICs. The event will conclude with a summary and closing remarks at 11:50.