Baltimore Colloquium on Next Gen Technologies for 5G and Beyond
The Baltimore Chapter of Electron Devices and Solid-State Circuits will be hosting its seventh Fall Colloquium on October 9, 2019. The theme of this year's meeting is Next Gen Technologies for 5G and Beyond. This one-day event features a panel of Distinguished Lecturers from IEEE EDS and local experts in the field. Attendance is open to industry, government, and academia, including students. The venue is the American Center for Physics (Conference Room A), one mile southeast of the University of Maryland College Park campus. For location and directions see http://www.acp.org/directions-american-center-physics.
Admission and parking are free, but registration is required. Complimentary lunch will be provided for those who register by October 4. Attendance is limited to 50; if you are unable to register online, contact the chapter secretary papotyraj@ieee.org.
Co-sponsored by Washington DC / NoVa EDS.
Schedule:
09:00 Registration and Coffee
09:15 Dr. Pankaj Shah (IEEE EDS/SSCS), Opening Remarks
09:30 Dr. A. Bandyopadhyay (Globalfoundries), "Si Technologies for 5G Enhanced Mobile Broadband"
10:15 Dr. Paul Lane (Nat'l Science Foundation), "Advances in Devices and Circuits for Next Gen Comms"
10:45 Dr. Patrick Fay (Notre Dame), "Advances in III-N Devices for 5G and Beyond"
11:30 Lunch
12:30 Dr. Mario Miscuglio (George Washington University), "Integrated Photonics for Neuromorphic Computing"
01:00 Dr. Mina Rais-Zadeh (Univ. of Michigan), "Phase Change RF to Optical Microdevices"
01:45 Dr. Robert Young (Northrop Grumman), "Third Generation GeTe-based Phase Change RF Switches"
02:15 Coffee Break
02:30 Dr. David Meyer (Naval Research Lab), "Transition Metal Nitride Materials & Devices for Future RF"
03:00 Dr. Aris Christou (Univ. of Maryland), "Crystal Defects in GaN & Diamond Electronics"
03:30 Dr. Pankaj Shah (Army Research Lab), "Transfer-Doped Diamond FETs for Next Gen RF"
04:00 Closing Remarks
Date and Time
Location
Hosts
Registration
- Date: 09 Oct 2019
- Time: 09:00 AM to 05:00 PM
- All times are (GMT-05:00) US/Eastern
-
Add Event to Calendar
- One Physics Ellipse
- College Park, Maryland
- United States 20740
- Building: American Center for Physics
- Room Number: Conference Room A
- Click here for Map
- Contact Event Host
-
Colloquium Chair:
Dr. Pankaj Shah pankaj.shah@ieee.org
- Co-sponsored by Washington DC / NoVa EDS (murtyp@ieee.org)
- Starts 14 March 2019 12:00 PM
- Ends 07 October 2019 11:59 PM
- All times are (GMT-05:00) US/Eastern
- 5 in-person spaces left!
- No Admission Charge
Agenda
Bandyopadhyay: 5G involves different usage scenarios covering enhanced mobile broadband (eMBB), ultra-reliable, low latency communication and low power massive machine-to-machine communication. I’ll focus on mmWave based eMBB, highlighting the need for mmWave based mobile communication, different hardware architecture options and key figures of merits for the radio interface. I'll discuss different chip partitioning options and how different Si technologies can address the requirements for mmWave 5G architectures.
Lane: Advances in Devices and Circuits for Next Generation Communications.
Fay: Achieving 5G comm systems requires advancements in device technologies. To obtain low latency and high bandwidth, devices offering mm-wave performance with low power consumption but still delivering low noise figure, high linearity, and ability to be integrated in compact form are essential. Properties of III-N materials enable new approaches for designing mm-wave transistors for switching and low-noise amplifier applications, while novel fabrication processing techniques provide options for realizing highly-integrated systems with enhanced performance.
Miscuglio: Engineering architectures able to implement Neural Network (NN) algorithms with high efficiency is of major importance for applications ranging from pattern recognition to classification. The main solution consists in replacing general purpose processor with more specialized and task-specific processor, such as GPUs or FPGAs. We propose a feedforward fully-connected NN on integrated photonic circuits optimized for data computation and parallelism. The proposed technology can be employed as micro data centers in edge devices that can perform in real time intelligent decision over large data with high throughput at the edge of the network.
Rais-Zadeh: Chalcogenide glasses are a subfamily of phase change materials (PCM) with nonvolatile properties which have been incorporated into different electronic and optical systems. PCMs undergo a transition between their room-temperature-stable phases, amorphous and crystalline, in response to external stimulus such as current or laser pulse. Amorphous films are optically transparent and electrically isolative while crystalline PCMs are typically optically lossy, reflective, and electrically conductive. 6 orders of magnitude change in resistivity and 2X change in optical properties make GeTe a good candidate for electrical and optical devices. I'll present several tunable devices using optical or electrical switching behavior of GeTe, including RF ohmic switches, optical modulators, and color filters, and our approach to mitigate challenges.
Young: Recent progress in GeTe-based phase-change RF switch technology will be presented. Tungsten micro-heaters in the Inline Phase Change Switch (ICPS) processes improved device performance and reliability. Simulations of the melt/quench in GeTe for a thermally activated independent W heating element will be shown. A small series-shunt, single-pole double-throw switch based on 3rd generation IPCS technology had <1 dB loss at DC-65GHz and was shown to successfully melt/quench down to 40 mK.
Meyer: As future 5G requirements push the limits of RF hardware, new materials systems may help realize device amplifier and filter technology suitable for microwave to millimeter-wave operation. NRL is investigating thin film growth of transition metal nitride materials including ScAlN, which offers higher spontaneous and piezoelectric polarization properties than AlN. With MBE we achieve single-crystal films with uniform composition lattice-matched to GaN and used for device heterostructures. This talk will overview our growth of transition metal nitride films and subsequent application in high-electron-mobility transistors and acoustic wave resonators.
Christou: Switching devices made from SiC and GaN semiconductors contain a high density of crystal defects, most present in starting wafers and some generated in processing. There's little evidence on the role crystal defects play on performance, yield, and reliability, especially operating under extreme stress. This paper provides a review of Diamond and GaN power semiconductor material technology, and the potential role defects may have.
Shah: To process and transmit massive information expected in cellular networks, higher frequency semiconductor electronics R&D is taking place today. One semiconductor with great potential is diamond, due to high charge carrier bulk mobility, thermal conductivity, and breakdown voltage. To achieve high free carrier concentrations for high conductivity RF FETs, transfer doping is the choice method. Our group is fabricating and characterizing surface transfer doped diamond RF FETs on externally sourced single-crystal diamond wafers. We obtained 70 GHz cutoff frequencies on currents of 750 mA/mm, and transconductances of 140 mS/mm. Transfer doping is key to obtaining high free charge carrier densities for surface conduction devices in diamond. However the challenges we are working to mitigate are 1) maintaining high free charge carrier densities, 2) increasing surface mobility of charge carriers and 3) device stability over time. Results obtained to date will be presented along with a discussion on the modeling activity underway to develop circuits based on these devices.