A Review of GaN Transistors and MMCs for Very High Power Applications
A Review of GaN Transistors and MMCs for Very High Power Applications.
Content of Presentation A Review of GaN HEMT Transistors and MMICs for Very High Power Applications Summary Advantages of GaN HEMT Technology and impact on high power PA engineering Field Plates, Reliability, Robustness CW, Pulsed and “Linear†Operation Modes Thermal Management CW thru’ pulsed operation – transient thermal resistance Examples of commercially available devices Different methods of power combining PA line-ups and use of MMICs as drivers Examples of hardware realizations L-Band, S-Band, C-Band, X-Band, Ku-Band, Ka-Band Radars, EW, Satcom, Space Table of typical performances versus frequency Conclusions
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- 16 Eagle Rock Avenue
- E. Hanover, New Jersey
- United States 07936
- Building: Hanover Manor
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- Co-sponsored by MTT/AP-S Chapter
- Starts 25 June 2013 04:00 AM UTC
- Ends 03 October 2013 12:00 PM UTC
- No Admission Charge
Speakers
Dr. Raymond Pengelly
A Review of GaN Transistors and MMCs for Very High Power Applications
Biography:
Ray Pengelly gained his BSc. and MSc. degrees from Southampton University, England in 1969 and 1973 respectively. Ray worked for the Plessey Company in the UK from 1969 to 1986 in a variety of engineering roles with increasing seniority. From 1978 to 1986 he managed the world-renowned GaAs MMIC department at Plessey Research, Caswell.
In 1986 Tachonics Corporation in Princeton, New Jersey employed Ray where he was Executive Director of Design for analog and microwave GaAs MMICs. He joined Compact Software, Paterson, New Jersey in 1989 as Vice President of Marketing and Sales, where he was responsible for the development of state-of-the-art computer-aided design tools to the RF, microwave and lightwave industries.
Starting in 1993 Raytheon Commercial Electronics, Andover, Massachusetts, employed Ray in a number of positions including MMIC Design and Product Development Manager and Director of Advanced Products and New Techniques. Under these capacities he managed a growing team to develop new products for emerging markets including power amplifiers for Wireless Local Loop applications using pHEMT technology, Si-Ge mixed signal products, flip chip and chip scale packaging as well as new subsystem techniques such as I/Q pre-distortion.
Since August 1999, Ray has been employed by Cree Inc. in Durham, North Carolina. Initially he was the General Manager for Cree Microwave responsible for bringing Cree’s wide bandgap transistor technology to the commercial market-place. From September 2005 he became responsible for strategic business development of wide bandgap technologies for RF and microwave applications for Cree and most recently has been involved with the release of GaN HEMT transistors and MMICs for general purpose and telecommunications applications.
Ray has written over 120 technical papers, 4 technical books, holds 14 patents and is both a Fellow of the IEEE and Fellow of the IET. IN 2009 he was inducted into the Microwaves and RF Microwave Legends Hall of Fame as the co-inventor of the monolithic microwave integrated circuit and for his contributions to RF and microwave engineering particularly in the areas of power amplifiers, multi-function RFICs and new subsystem techniques.
Email:
Address:United States, 07504
Dr. Raymond Pengelly
A Review of GaN Transistors and MMCs for Very High Power Applications
Biography:
Email:
Address:United States
Agenda
A Review of GaN HEMT Transistors and MMICs for Very High Power Applications
Summary
Advantages of GaN HEMT Technology and impact on high power PA engineering
Field Plates, Reliability, Robustness
CW, Pulsed and “Linear†Operation Modes
Thermal Management
CW thru’ pulsed operation – transient thermal resistance
Examples of commercially available devices
Different methods of power combining
PA line-ups and use of MMICs as drivers
Examples of hardware realizations
L-Band, S-Band, C-Band, X-Band, Ku-Band, Ka-Band
Radars, EW, Satcom, Space
Table of typical performances versus frequency
Conclusions