Symposium on Schottky barrier MOS devices 2020
The joint MOS-AK Workshop and Symposium on Schottky Barrier MOS (SB-MOS) devices is held from September 29th to October 1st 2020 at the Technische Hochschule Mittelhessen – University of Applied Sciences, Germany. This is the first joint R&D event between MOS-AK and Symposium of SB-MOS. Additionally, in the time frame an IEEE EDS Mini-Colloquium on „Non-conventional Devices and Technologies“ will take place.
This year the joint R&D event is sponsored by THM, the IEEE EDS Germany chapter, IEEE Young Professionals Germany Affinity Group, AdMOS GmbH, and organized by Dr. Laurie Calvet (C2N, Palaiseau, France), Dr. Mike Schwarz (Robert Bosch GmbH, NanoP THM, Germany), Dr. Wladek Grabinski (MOS-AK Association, EU), Prof. Alexander Kloes (NanoP THM, Germany), and the staff at the Center for Nanotechnology and Photonics at TH Mittelhessen.
Our joint R&D event starts on September 29th at 9:15 am with a MOS-AK workshop. The workshop continues on September 30th morning to noon. In the afternoon, the IEEE EDS Mini-Colloquium „Non-Conventional Devices and Technologies“ will take place and will continue during the moring of October 1st . In the afternoon, the Symposium on SB-MOS is held. The event will be virtual due to the world pandemic of COVID-19.
Attendees are welcome to participate in our joint R&D event. The attendees are limited in total to 300. Further information is present at
Symposium of SBMOS
https://ssbmos.blogspot.com
and
MOS-AK
http://www.mos-ak.org/giessen_2020
Date and Time
Location
Hosts
Registration
- Date: 01 Oct 2020
- Time: 01:00 PM to 04:00 PM
- All times are (UTC+02:00) Berlin
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- Virtual, Hessen
- Germany 35390
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- Co-sponsored by IEEE EDS Germany chapter, IEEE Young Professionals Germany Affinity Group