Towards monolithic quantum computing processors in production FDSOI CMOS technology
IEEE Orange County EDS/MTT Joint Chapter Presents: Prof. Sorin Voinigescu
Prof. Sorin Voinigescu
University of Toronto
Department of Electrical and Computer Engineering
Toronto, Ontario, Canada
Abstract: This presentation will discuss the fundamental concepts and the feasibility of high-temperature (2-4 K) Si and SiGe electron/hole-spin qubits and qubit integrated circuits (ICs) in commercial 22nm FDSOI CMOS technology,. The beneficial aspects of the SiGe channel hole-spin qubit will be emphasized in comparison with its silicon-only electron-spin counterpart. It is also shown that, at 2 K, MOSFETs and cascodes can be operated as quantum dots in the subthreshold region, while behaving as classical MOSFETs and cascodes in the saturation region, suitable for qubits and mm-wave mixed-signal processing circuits, respectively. Challenges in the design and testing of quantum processor units monolithically integrated with readout and mm-wave spin control electronics in commercial 22nm FDSOI CMOS technology, will also be covered. Finally, I will present measurements for full technology characterization at cryogenic temperatures up to 67 GHz.
Speaker Bio: Sorin P. Voinigescu is a Professor in the Electrical and Computer Engineering Department at the University of Toronto where he holds the Stanley Ho Chair in Microelectronics and is the Director of the VLSI Research Group. He is an IEEE Fellow and an expert on millimeter-wave and 100+Gb/s integrated circuits and atomic-scale semiconductor device technologies. He obtained his PhD degree in Electrical and Computer Engineering from the University of Toronto in 1994 and his M.Sc Degree in Electronics and Telecommunications from the Politechnical Institute of Bucharest in 1984.
Date and Time
Location
Hosts
Registration
- Date: 15 Nov 2019
- Time: 10:00 AM to 11:30 AM
- All times are (GMT-08:00) US/Pacific
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Dr. Hector J. De Los Santos
- Starts 06 October 2019 06:51 PM
- Ends 14 November 2019 06:51 PM
- All times are (GMT-08:00) US/Pacific
- No Admission Charge
Speakers
Sorin Voinigescu of University of Toronto
Towards monolithic quantum computing processors in production FDSOI CMOS technology
This presentation will discuss the fundamental concepts and the feasibility of high-temperature (2-4 K) Si and SiGe electron/hole-spin qubits and qubit integrated circuits (ICs) in commercial 22nm FDSOI CMOS technology,. The beneficial aspects of the SiGe channel hole-spin qubit will be emphasized in comparison with its silicon-only electron-spin counterpart. It is also shown that, at 2 K, MOSFETs and cascodes can be operated as quantum dots in the subthreshold region, while behaving as classical MOSFETs and cascodes in the saturation region, suitable for qubits and mm-wave mixed-signal processing circuits, respectively. Challenges in the design and testing of quantum processor units monolithically integrated with readout and mm-wave spin control electronics in commercial 22nm FDSOI CMOS technology, will also be covered. Finally, I will present measurements for full technology characterization at cryogenic temperatures up to 67 GHz.
Biography:
Sorin P. Voinigescu is a Professor in the Electrical and Computer Engineering Department at the University of Toronto where he holds the Stanley Ho Chair in Microelectronics and is the Director of the VLSI Research Group. He is an IEEE Fellow and an expert on millimeter-wave and 100+Gb/s integrated circuits and atomic-scale semiconductor device technologies. He obtained his PhD degree in Electrical and Computer Engineering from the University of Toronto in 1994 and his M.Sc Degree in Electronics and Telecommunications from the Politechnical Institute of Bucharest in 1984.
Agenda
10:00-10:30 AM Arrival & Networking
10:15-11:30 AM Talk, followed by Q&A
Reservations: Please, RSVP by 11/12/19 by sending e-mail to: info@nanomems-research.com
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