IEEE EDS Seminar on " Ga2O3: Properties, Prospects, and Progress."
Date: 21 October 2019
Time: 04:00 PM to 05:00 PM
Speaker: Dr. D. Krishnamurthy, Novel Crystal Technology Inc., JAPAN and SHANAN Innovetek Ventures, Chennai, India
Title: Ga2O3: Properties, Prospects, and Progress
Abstract: Ga2O3 was attracting researchers as a promising wide bandgap semiconductor material for several years owing to its excellent material properties for applications in high power and high voltage electronics. The bandgap (4.6 eV) and the expected Baliga’s figure of merit (FOM) of Ga2O3 are much larger than those of SiC and GaN. Ever since “Tamura Co. Ltd, Japan” made possible the availability of large-size, high-quality Ga2O3 wafers (manufacturing them from a single-crystal bulk synthesized by melt–growth methods) [1], the research activities on Ga2O3 based LEDs and Power devices have really taken off to a high degree in the recent years. The initial research works were focused on the realization of GaN-based high power LEDs on the Ga2O3 substrates, replacing the high cost GaN and SiC substrates. However, the first demonstration of MESFETs [2] and MOSFETs [3] by Higashiwaki et al of National Institute of Information and Communications Technology, (NICT), Japan, has attracted tremendous attention paving way for world-wide research start-ups on the power electronics applications. The researchers working on this material believe it to be very much suitable for extreme environment applications. Of course, the issue of poor thermal conductivity needs to be aggressively addressed. Commercial devices based on Ga2O3 are expected to be produced within the next couple of years.
A three-pronged approach of growing the Ga2O3 substrates, optimizing the epi-growth of suitable device structures on the available substrates, and fabrication of the devices using the commercially available epi-wafers will result in significant contribution by researchers on this highly potential material. The device fabrication using the commercially available device-ready epi-wafers will boost the advancements of achieving the full prospects of this material. In the present talk, it is proposed to present the salient features of the Ga2O3, along with an overview of the current world-wide research activities based on the Ga2O3 substrates.
References:
- “US patent- US 20140352604 A1”, “Method for growing β- Ga2O3 single crystal”, Tamura Corporation, Koha Co., Ltd., Japan,
- Higashiwaki et al, “Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β- Ga2O3 (010) substrates”, Appl. Phys. Lett. 100, 013504 (2012)
- Higashiwaki et al, “Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β- Ga2O3 (010) substrates and temperature dependence of their device characteristics”, Appl. Phys. Lett. 103, 123511 (2013)
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