1. Black Phosphorus and Perovskite Chalcogenide Materials for mid-IR Detection and Imaging 2. Emerging Low Dimensional Material Electronic Devices for Memory and Computing

#mid-IR #Detection #and #Imaging #Memory #Computing #IEEE-NTC #Nanotechnology

    1.  Recent progress in new narrow bandgap material discovery such as black phosphorus (BP) and perovskite chalcogenide materials including barium titanium sulfide (BaTiS3) open the door to a new generation of photonic materials for mid-infrared sensing and imaging. High mobility, narrow gap BP and BaTiS3 thin film have shown promising properties for mid-infrared and long wavelength infrared optoelectronics. Furthermore, their low-symmetry crystal structures allow for the realization of polarization sensitive electro-optical detection in the mid-infrared range. Here, I will present our work in understanding the fundamental electronic and optical properties of BP and BaTiS3, including using the scanning ultrafast electron microscopy technique to obtain spatial-temporal imaging of the real-time carrier dynamics. Our recent demonstration of polarization sensitive mid-IR detector and the development of mid-IR focal-plane array will also be presented. Technological potential and future impacts of these novel mid-IR materials and devices will be discussed.

    2. Low dimensional materials offer a rich array of unique physical properties that are promising for developing a new generation of electronic devices beyond von-Neumann computing hardware. In this talk, I will discuss our recent work in developing atomically-thin resistive memory devices based on low dimensional materials that can achieve ultralow-power operation at the sub-femtojoule level. Our work on developing low dimensional material based phase transition oscillatory neuronal devices will also be discussed. Due to their atomically confined geometry, such oscillatory devices exhibit pronounced stochastic feature with dynamically tunable distribution parameters closely resembling biological neuron spiking. Furthermore, the demonstration of the low power hardware implementation of new computing schemes such as Boltzmann machine and stochastic Hopfield network based on these novel devices will be presented.

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• Montreal, Quebec
• Canada

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• Contact Event Host

• xin.liu@emt.inrs.ca, moein.noferesti@ieee.org

• Co-sponsored by IEEE-NTC

• Starts 26 October 2020 12:50 PM UTC
• Ends 28 October 2020 05:10 PM UTC
• No Admission Charge

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The webinar will be done in Zoom.