Prof. Bharat Bhuva of Vanderbilt University

Every storage cell on an IC fabricated at advanced technologies is susceptible to radiation-induced data errors, known as single-event upsets or soft errors. Single-event upsets are the result of energy deposition by an energetic particle incident on a semiconductor region.  Proliferation of electronic systems in everyday life has necessitated evaluation of single-event effects on storage cells to characterize failure rates of these systems. Out of all storage cells, SRAM cells are most vulnerable to single-event effects due to very low critical charge values.  Improvements in fabrication processes have resulted in a mixed bag of results.  This talk will examine the effects of strain engineering and FinFET physical shape on single-bit and multi-cell upsets for SRAM arrays. 

Biography:

Bharat Bhuva obtained his graduate degrees from North Carolina State University.  He is Professor of Electrical and Computer Engineering at Vanderbilt University where he conducts research in the area of microelectronics reliability, radiation-hardened circuit design and analysis.  He has characterized every technology node since 130nm node for radiation effects. He has developed test circuits for assessing radiation effects, EDA tools for evaluating radiation effects, and RHBD designs.  He has published more than 300 papers and has received multiple best paper awards at international conferences.

Email:

Address:Vanderbilt University, , Nashville, Tennessee, United States