IEEE EDS Summer School on Recent Trends in Nanotechnology and Nanoelectronics: Devices, Circuits and Systems

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2021 IEEE Electron Devices Society (EDS) Summer School on “Recent Trends in Nanotechnology and Nanoelectronics: Devices, Circuits and Systems”, 1-5 Sep 2021

Registration Process Steps:
2. As per the Brochure of the Program, Pay the Registration Fee.
3. Send the Payment Slip to IEEE ED NITSilchar SBC <ieee.ednits@gmail.com>.


  Date and Time

  Location

  Hosts

  Registration



  • Start time: 01 Sep 2021 09:00 AM
  • End time: 05 Sep 2021 07:00 PM
  • All times are (GMT+05:30) Asia/Calcutta
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  • National Institute of Technology Silchar
  • Dept of ECE, NIT Silchar
  • Silchar, Assam
  • India 788010
  • Building: ECE/CSE Building
  • Room Number: EC-23

  • Contact Event Hosts
  • Co-sponsored by Dr. T. R. Lenka
  • Starts 26 July 2021 07:00 PM
  • Ends 01 September 2021 09:00 AM
  • All times are (GMT+05:30) Asia/Calcutta
  • No Admission Charge






Agenda

2021 IEEE Electron Devices Society (EDS) Summer School on “Recent Trends in Nanotechnology and Nanoelectronics: Devices, Circuits, and Systems”, 1-5 Sep 2021

1. Prof. Durga Misra, New Jersey Institute of Technology Newark, NJ, USA

Title:  Reduction of Switching Power in RRAM Devices for In-Memory Computing Hardware

2. Prof. Victor Veliadis, Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, USA

Title: SiC power device high impact applications and path to commercialization

3. Prof. Frank Schwierz, Technische Universität Ilmenau, Germany

Title: The Prospects of 2D (two-dimensional) Materials for Future Electronics

4. Prof. Michael Shur, Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, NY, USA

Title: State-of-the-Art Silicon Very Large Scale Integrated Circuits: Industrial Face of Nanotechnology

5. Prof. Ioannis (John) Kymissis, Columbia University SEAS, NY, USA

Title: Introduction to MicroLEDs

6. Dr. Andi Kerber, Intel Corporation, CA, USA

Title: Reliability of Metal Gate / High-K CMOS device

7. Prof. Lan FU, Dept. Electronic Materials Engineering, The Australian National University, Canberra, Australia

8. Dr. Samar Saha, Santa Clara University, Santa Clara, CA, USA

Title: Physics of Microelectronics Device Models for VLSI Circuit Design

9.  Prof. Mina Rais-Zadeh, University of Michigan, Ann Arbor

Title: Advanced MEMS and Microsystems for NASA application

10. Prof. Lluis F. Marsal, Universitat Rovira i Virgili, Spain

Title: Progress and Perspectives in Organic Solar Cells

11. Prof. Benjamin Iñiguez, University rovira i Virgili, Spain

Title: Identification and modeling of low-frequency noise sources in Organic and IGZO Thin-Film Transistors

12. Prof. Tibor Grasser, TU Wien, Vienna, Austria

Title: Insulators for 2D Nanoelectronics

13. Prof. Arokia Nathan, University of Cambridge, UK

Title: Title: Ultralow Power Flexible Electronics

14. Prof. Hieu. P. T. Nguyen, NJIT, USA

Title: III-Nitride Nanowire LEDs: Material, Device Fabrication, Characterization and Applications

15. Prof. G. N. Dash, Superannuated Professor, Sambalpur University, India

Title: Novel architecture graphene devices to mitigate scaling challenges

16. Prof. P. Susthitha Menon, UKM, Malaysia

Title: Kretschmann-based Plasmonic Biosensors

17. Prof. A. K. Panda, Electronics Centre of Excellence (ECoE), Bhubaneswar, India

Title: RF components for 5G Communication Technologies

18. Prof. Sorin Cristoloveanu, IMEP - INP Grenoble MINATEC, France

Title: Revolutionary nanotransistors with electrostatic doping

19. Prof. Mikael Östling, KTH Royal Institute of Technology, Stockholm, Sweden

Title: Silicon Carbide Device Technology for Power Devices and High-temperature Applications

20. Prof. Paul R. Berger, Ohio State University, USA,

Title: AlN/GaN RTD with Unipolar Light Emission



  Media

Brochure Brochure 2.65 MiB
Program Schedule Program Schedule 323.58 KiB