"ELECTRON DEVICES - World of Nanoelectronics: 75th Year of Transistor", IEEE EDS Distinguished Lecturer talk


Abstract: Electron devices and materials has reached a crossroad with Moore’s law. While scaling (More Moore) will continue nanoelectronics device research will face many challenges and issues. This year being the 75th Year of Transistor the talk will discuss how the transistor has been transformed from a planar device to a three-dimensional device, FinFET. We will also talk about its reliability issues like Self-Heating. Integration of new channel materials like germanium, gate stack formation and scaling of memory devices continue to be part of active research. The research focus of beyond scaling (More than Moore) involves new devices and materials. Additionally, current trends in Internet of Things (IoT) require the convergence of Nanoelectronics, Nanotechnology, Communication Technology, and Information Technology. Integrated sensor systems monitoring environment, health care, water quality, vehicle traffic, smart cities are becoming the norm. Furthermore, nanoelectronics devices with extremely low power consumption like ReRAM allows a set of next generation devices for artificial intelligence hardware and neuromorphic applications. It is, therefore, important to get exposed to the current trends in circuit design architectures, device structures and fabrication, device and circuit relationship and design, reliability of new devices and processes.

  Date and Time




  • Date: 01 Jun 2022
  • Time: 11:00 AM to 12:00 PM
  • All times are (GMT-08:00) Canada/Pacific
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This talk will be held in-person. To accomodate remote attendees, there will also be a remote connection via Zoom:



Prof. Durga Misra Prof. Durga Misra of New Jersey Institute of Technology, Newark, USA


Prof. Durga Misra

Professor and Chair, Dept. of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, USA


Speaker biography: Dr. Durga Misra is a Professor and Chair in the Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, USA. His current research interests are in the areas of nanoelectronics/ optoelectronics devices and circuits, especially in the area of nanometer CMOS gate stacks and device reliability. He is Fellow of IEEE. He is a Distinguished Lecturer of IEEE Electron Devices Society (EDS). He is also a Fellow of the Electrochemical Society (ECS). He received the Thomas Collinan Award from the Dielectric Science & Technology Division of ECS and the winner of the Electronic and Photonic Division Award from ECS. He edited and co-edited more than 50 books and conference proceedings in his field of research. He has published more than 200 technical articles in peer reviewed Journals and in International Conference proceedings including 100 Invited Talks. He has graduated 19 PhD students and 50 MS students. He received the M.S. and Ph.D. degrees in electrical engineering from the University of Waterloo, Waterloo, ON, Canada, in 1985 and 1988, respectively.


Address:Newark, United States