IEEE SWISS SSC Lecture :Seventy Fifth Anniversary of the Transistor, Moore’s Law, and Radiation Effects on Microelectronics

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Dear Members,

We hope all of you are doing well,

Your Swiss Solid State Circuit Society chapter is please to host Prof. Dan Fleetwood,,

On Wednesday the 8 th of June.

The topic of the lecture is : " 75 th Anniversary of the Transistor, Moore’s Law, and Radiation Effects on Microelectronics "

The lecture will be Held at EPFL Neuchatel Campus in room MC B1 303 

The Agenda is as follow:

10:30 - 10:40Welcome participants

10:40 - 12:00 Lecture

12:00 - 12:15 Questions / Discussion

We look forward meeting you and having fruitful discussion.

Kind regards,

Prof. Christian Enz and  Mathieu Coustans

For your IEEE Switzerland Solid State Circuit Society committee.



  Date and Time

  Location

  Hosts

  Registration



  • Date: 08 Jun 2022
  • Time: 10:30 AM to 12:15 PM
  • All times are (UTC+01:00) Bern
  • Add_To_Calendar_icon Add Event to Calendar
  • EPFL Neuchatel Campus
  • Neuchatel, Switzerland
  • Switzerland
  • Building: Microcity
  • Room Number: MC B1 303

  • Starts 31 May 2022 12:03 AM
  • Ends 07 June 2022 12:00 PM
  • All times are (UTC+01:00) Bern
  • No Admission Charge


  Speakers

Dan Fleetwood, Dan Fleetwood,

Topic:

Anniversary of the Transistor, Moore’s Law, and Radiation Effects on Microelectronics

In 1965, just 18 years after the invention of the transistor, Gordon Moore postulated that the
number of components in an integrated circuit would double every 1-2 years. This trend still holds,
making it one of the longest, sustained geometric progressions in the history of the industrialized world,
enabling revolutions in computing and in virtually every aspect of technology that is enabled or
enhanced by computing. Transistor dimensions have decreased from tens of microns to ~ 5 nm over this
time period. In this presentation, I will offer some personal reflections on the 75 th anniversary of the
invention of the transistor, and then discuss how Moore’s Law size and voltage scaling of transistors and
integrated circuits have influenced transistor architectures and computing capabilities. The effects of
Moore’s Law scaling on the vulnerability of microelectronics to ionizing radiation effects in near-Earth
space and terrestrial applications will then be discussed in detail for past, present, and future
generations of highly-scaled integrated circuit technologies.

Biography:

Dan Fleetwood received his Ph.D. from Purdue University in 1984. He joined Sandia National
Laboratories in 1984 as a Member of the Technical Staff. In 1990, he was named a Distinguished
Member of the Technical Staff. Dan accepted a position as Professor of Electrical Engineering at
Vanderbilt University in 1999. From 2003-2020 he served as Chairman of Vanderbilt’s Electrical
Engineering and Computer Science Department. In 2009 he was named Olin H. Landreth Chair in
Engineering. Dan is author or co-author of more than 600 publications on radiation effects, low
frequency noise, and defects in microelectronic materials and devices. He received the 2009 IEEE
Nuclear and Plasma Sciences Merit Award, the society’s highest technical honor, and is a Fellow of IEEE,
the American Physical Society, and the American Association of the Advancement of Science.