Weekly "Inverted Conference" Seminar in Remote Sensing & Communication
An Extroverted Team Approach to Graduate from AFIT with a World Class Publishable Thesis!
Open forum for all, but especially for students.
This Friday 3 pm is open to students (primarily Air Force Institute of Technology, but all invited) presenting a 15 min (or so) talk on what interests them. Open to any & all students, so pass the word. This is a good place for young folks to teach something new to old folks who still like to learn, & / or forgot what it was like to be young.
Date and Time
Location
Hosts
Registration
- Date: 29 Jul 2022
- Time: 03:00 PM to 04:00 PM
- All times are (UTC-04:00) Eastern Time (US & Canada)
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Add Event to Calendar
- Contact Event Hosts
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timothy.wolfe@afit.edu
tswolfe@ieee.org
- Co-sponsored by Wright-Patt Multi-Intelligence Development Consortium (WPMDC), The DOD & DOE Communities
Speakers
Eric Fairchild
GaN COTS HEMT Reliability Test Plan
Commercial off the shelf (COTS) Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are widely used in high power/frequency applications due to GaN’s electrical properties which include a wide direct bandgap of approximately 3.4eV. GaN’s inherent wide spacing between the valence band maximum and conduction band minimum are what allow GaN to perform at higher power levels, frequencies, and temperature conditions than that of conventional semiconductor materials, such as silicon. However, unlike silicon-based devices which have established qualification standards, qualifying GaN devices into new and existing systems takes additional time because there is currently no widely accepted standard for evaluating the reliability of GaN transistors. This test plan seeks to detail the I-V characterization and reliability testing on a number of GaN COTS devices from various manufacturers to identify gate leakage current as an identifying factor of device reliability.
Biography:
Captain Eric Fairchild is a graduate student at AFIT pursing his MSEE. After growing up in Pennsylvania and attending Penn State for his BSEE, he commissioned into the Air Force in 2013. He has had assignments as a Ballistic Missile Analyst at the National Air and Space Intelligence Center, WPAFB and as a Test Engineer and Test Director at the Defense Intelligence Agency in Charlottesville, VA. He also hold an MPS in Renewable Energy and Sustainability Systems from Penn State.
Email:
Agenda
TITLE: GaN COTS HEMT Reliability Test Plan
ABSTRACT: Commercial off the shelf (COTS) Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are widely used in high power/frequency applications due to GaN’s electrical properties which include a wide direct bandgap of approximately 3.4eV. GaN’s inherent wide spacing between the valence band maximum and conduction band minimum are what allow GaN to perform at higher power levels, frequencies, and temperature conditions than that of conventional semiconductor materials, such as silicon. However, unlike silicon-based devices which have established qualification standards, qualifying GaN devices into new and existing systems takes additional time because there is currently no widely accepted standard for evaluating the reliability of GaN transistors. This test plan seeks to detail the I-V characterization and reliability testing on a number of GaN COTS devices from various manufacturers to identify gate leakage current as an identifying factor of device reliability.
Please pass the word & invite others.
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FEEDBACK please: if you have any ideas for a better day, time, place, forum for this exchange, please let me know.