Advances in GaN Devices
Gallium Nitride (GaN) power FETs have been in production for over 10 years, and advances continue to
be made. Covered in this talk is a review of GaN FETs, and recent advances in the GaN devices and also in
the understanding and application of GaN devices. Included are reliability advances, packaging, board
layout advances, and thermal design. Also covered is an introduction to the structure of GaN ICs. Finally,
a look at the near future of GaN devices and their application are explored.
Date and Time
Location
Hosts
Registration
- Date: 03 Nov 2022
- Time: 03:00 PM to 04:00 PM
- All times are (UTC-04:00) Eastern Time (US & Canada)
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- 110 Motor Parkway
- Hauppauge, New York
- United States
- Building: Hauppauge Radisson
- Starts 01 November 2022 01:33 PM
- Ends 03 November 2022 01:33 PM
- All times are (UTC-04:00) Eastern Time (US & Canada)
- No Admission Charge
Speakers
Brian Miller of EPC
Advances in GaN Devices
https://www.ieee.li/pdf/viewgraphs/advances-in-gan-devices.pdf
Biography:
Brian Miller joined EPC in 2016, where he is senior field applications engineer for eastern North America.
He has over 30 years of experience in power electronics, as a design engineer and as a field application
engineer. At IBM and Sony/Ericsson he designed small, efficient power supplies and battery chargers, and
designed a custom analog controller IC for notebook PC DC/DC and battery charging. Previous to EPC,
Brian was a field application engineer for Semtech, where he was involved in designs for DC/DC, AC/DC,
LED lighting, TVS, and other areas. He has authored patents, articles, and talks. Brian received his MSE
and BS degrees from Duke University in Durham, North Carolina.