Replacing Silicon IGBT Modules with SiC MOSFET Modules
SiC MOSFET modules are now commercially available with blocking voltage ratings ranging from 600 V to
3.3 kV and current ratings from 25 A to 1200 A. The presentation will outline the application requirements
and expected performance gains when replacing silicon IGBTs with SiC MOSFETs.
Date and Time
Location
Hosts
Registration
- Date: 05 Nov 2022
- Time: 05:00 PM to 06:00 PM
- All times are (UTC-04:00) Eastern Time (US & Canada)
-
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- 110 Motor Parkway
- Hauppauge, New York
- United States
- Building: Hauppauge Radisson
- Starts 01 November 2022 01:50 PM
- Ends 03 November 2022 01:50 PM
- All times are (UTC-04:00) Eastern Time (US & Canada)
- No Admission Charge
Speakers
Eric Motto of Mitsubishi Electric US
Replacing Silicon IGBT Modules w/ SiC MOSFET Modules
https://www.ieee.li/pdf/viewgraphs/replacing-silicon-igbt-modules-with-sic-mosfet-modules.pdf
Biography:
Eric R. Motto is chief engineer with Mitsubishi Electric US. He holds a Bachelor of Science in Electrical
Engineering from Pennsylvania State University and a Bachelor of Arts in Mathematics from Saint Vincent
College. Since 1990 Eric has been providing technical support for users of Mitsubishi power semiconductor
devices. Eric has written and presented more than fifty technical papers at industry conferences as well
as numerous application notes and magazine articles related to the design and application of high power
IGBTs, Intelligent Power Modules and SiC power devices.