IEEE-EDS Seminar - Atomistic Quantum Transport Modelling for Emergent 2D Material-based Device by Dr. Youseung Lee
IEEE-EDS Seminar - Atomistic Quantum Transport Modelling for Emergent 2D Material-based Device by Dr. Youseung Lee
The zoom meeting details for this event will be sent to registrants one day before the event on the email provided at registration.
Abstract:
Over the years, most of the manufactured electronic devices started to have at least one dimension in the nanometer scale. Concurrently, the non-equilibrium Green’s function (NEGF) framework has been broadly democratized to investigate quantum transport effects inside those devices. The latter framework has also proven its importance to correctly capture the underlining physics for the nano-scale devices. This talk will then discuss the latest development of atomistic quantum transport modelling for various emerging 2D materials-based devices. The first part of the talk will show an ab-initio approach that correctly captures the scattering mechanisms present in 2D FETs, combining the linearized Boltzmann Transport Equation (LBTE) and the NEGF formalism. Atomistic defect-variability study for 2D monolayer MoS2 FETs via many body defect-level corrections will also be presented. The second part will show the application of the ab-initio modeling framework to simulate Majorana transport, paving the way for topological qubits based on 2D nanoribbons. Atomistic modelling of van der Waals charge qubit manipulations and measurements in 2D materials will also be covered.
Date and Time
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- Date: 27 Jan 2023
- Time: 12:00 PM to 01:00 PM
- All times are (UTC-08:00) Pacific Time (US & Canada)
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Speakers
Dr. Youseung Lee of ETH Zürich
Atomistic Quantum Transport Modelling for Emergent 2D Material-based Device
Youseung Lee is a Post-doctoral Researcher at Nano-TCAD group of Integrated Systems Laboratory, ETH Zürich, Switzerland. He started his professional career as a TCAD engineer in Samsung Electronics Semiconductor Research Center, Korea in 2010 after he obtained MSc from KAIST. At Samsung, he worked on the development of 20, 14, and 10 nm logic technology nodes through TCAD process/device simulations. After the industrial career, he joined IM2NP-CNRS (Institut Matériaux Microélectronique Nanosciences de Provence) National Laboratory, France for PhD. Currently his main research focuses on the development of physics models dedicated to nano-electronic devices, along three main pillars: (A) computationally efficient quantum transport methods, (B) many body physics modelling, and (C) atomistic modelling for quantum computing devices hosting qubits.
Biography:
Youseung Lee is a Post-doctoral Researcher at Nano-TCAD group of Integrated Systems Laboratory, ETH Zürich, Switzerland. He started his professional career as a TCAD engineer in Samsung Electronics Semiconductor Research Center, Korea in 2010 after he obtained MSc from KAIST. At Samsung, he worked on the development of 20, 14, and 10 nm logic technology nodes through TCAD process/device simulations. After the industrial career, he joined IM2NP-CNRS (Institut Matériaux Microélectronique Nanosciences de Provence) National Laboratory, France for PhD. Currently his main research focuses on the development of physics models dedicated to nano-electronic devices, along three main pillars: (A) computationally efficient quantum transport methods, (B) many body physics modelling, and (C) atomistic modelling for quantum computing devices hosting qubits.
Agenda
Over the years, most of the manufactured electronic devices started to have at least one dimension in the nanometer scale. Concurrently, the non-equilibrium Green’s function (NEGF) framework has been broadly democratized to investigate quantum transport effects inside those devices. The latter framework has also proven its importance to correctly capture the underlining physics for the nano-scale devices. This talk will then discuss the latest development of atomistic quantum transport modelling for various emerging 2D materials-based devices. The first part of the talk will show an ab-initio approach that correctly captures the scattering mechanisms present in 2D FETs, combining the linearized Boltzmann Transport Equation (LBTE) and the NEGF formalism. Atomistic defect-variability study for 2D monolayer MoS2 FETs via many body defect-level corrections will also be presented. The second part will show the application of the ab-initio modeling framework to simulate Majorana transport, paving the way for topological qubits based on 2D nanoribbons. Atomistic modelling of van der Waals charge qubit manipulations and measurements in 2D materials will also be covered.
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