Current Status and Future Prospects of GaN Power HEMTs
The IEEE Reliability Society & Power Electronics Society Joint-Ottawa Chapter, the Power and Energy Society Ottawa Chapter, and the IEEE Consumer Technology Industry and Standards Activities Committee are inviting all interested IEEE members and prospective members to a seminar.
Gallium nitride (GaN) power devices have only recently become commercially available. The new devices enable the design of converters at higher frequencies and efficiencies than those achievable with conventional Si devices. This webinar will review the characteristics and figures of marit of different types GaN devices enhancement and depletion mode and will give the status of vertical GaN power devices. In addition, the challenges encountered in GaN-based converter design are considered, such as the consequences of faster switching on gate driver design and board layout. Other issues such as unique reverse conduction behavior, dynamic RDS_ON, breakdown mechanisms, thermal design, device availability, and reliability qualification will be also discussed.
Date and Time
Location
Hosts
Registration
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- 1385 Woodroffe Ave.
- Ottawa, Ontario
- Canada
- Building: T (Technology)
- Room Number: T129
- Contact Event Hosts
- Co-sponsored by IEEE Montreal Section
- Starts 03 October 2023 12:05 AM UTC
- Ends 18 October 2023 11:05 PM UTC
- No Admission Charge
Speakers
Tanya
Biography:
Tanya Kirilova Gachovska received her M.Eng., and Ph.D. degrees, all in Electrical Engineering, from the University of Ruse, Bulgaria, in 1995 and 2003. She earned her second Ph.D. Degree in Electrical Engineering (Power Electronics), at the University of Nebraska-Lincoln (UNL), Lincoln, USA in 2012. Her Ph.D. thesis was “Modeling of Power Semiconductor Devices”. She worked as an Assistant Professor at the University of Ruse from 1999 to 2003. She conducted research from 2004 to 2006 and taught for a semester in 2006 at McGill University in Montréal. She worked as a Postdoctoral Research Scientist in the area of Pulsed Electric Fields at UNL from 2012 to 2013. She worked for Solantro Semiconductor, Corp., Ottawa for seven years and now she works for MDA Space Montreal. Dr. Gachovska authored or coauthored more than 30 technical papers an conference presentations, two books, and two book chapters and holds a world patent in Pulsed Electric Fields. In 2019 Dr. Gachovska become a professional engineer of Ontario. She was PELS Ottawa chair and now PELS Montreal chair. She is PEDCC standard chair and chair for IEEE Standards for “Datasheet Parameters and Tests for Integrated Gate Drivers ” and “Datasheet Parameters and Tests for UVC LED Air Disinfection Chambers” Dr. Gachovska is a senior IEEE member.
Agenda
Admission: Free for IEEE members. Prospective members: $5 -pay if you can / wish.
P;enty of healthier snacks & refreshments will be served (thus the ask to pre-register soiup we have a good amount)
Please register to attend. Email the Host organiser with a helpful question, comment, concern or suggestion.