EDS/SSC DLL - 2023 - Proceso de generación de defectos espacio-temporales en pilas de MOS de HfO2 irradiadas: mecanismos correlacionados versus no correlacionados
Invitation
El IEEE Joint chapter Nº 3 (EDS/SCC) de la sección Argentina lo invita a la conferencia “Proceso de generación de defectos espacio-temporales en pilas de MOS de HfO2 irradiadas: mecanismos correlacionados versus no correlacionados” dictada por el distinguido conferencista del EDS IEEE Dr. Félix Palumbo.
Cabe aclara que la charla es sponsoreada bajo el programa de conferencistas distingidos del IEEE Electron Devices Society.
Abstracto
En este artículo, analizamos la dependencia de la pendiente de Weibull (β) extraída de las pruebas TDDB en condensadores HfO2 MOS (MOSCAP) en la densidad inicial de defectos inducidos artificialmente por experimentos de irradiación de microhaz cuidadosamente ajustados con diferentes dosis de carbono.
La tendencia experimental consistente de reducir β con el aumento de la densidad de defectos fue reproducible solo con simulaciones de descomposición basadas en la física que consideraron la generación de defectos correlacionados en HfO2 y los rastros de daños localizados (trayectorias de percolación parcial) creados por los iones que chocan. Los escenarios de distribución de defectos inicial espacialmente aleatoria y generación de defectos inducida por estrés aleatorio (en espacio y tiempo) no pudieron explicar las tendencias experimentales, lo que confirma que la generación de defectos correlacionados existe en HfO2, lo que altera bastante la comprensión convencional de TDDB.
Date and Time
Location
Hosts
Registration
- Date: 16 Nov 2023
- Time: 06:00 PM to 07:00 PM
- All times are (UTC-03:00) Buenos Aires
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- Starts 08 October 2023 03:48 PM
- Ends 16 November 2023 05:00 PM
- All times are (UTC-03:00) Buenos Aires
- No Admission Charge
Speakers
Dr. Felix Palumbo
Biography:
Felix Palumbo has received the MSc. (2000) and the Ph.D. (2005) both in physics from the University of Buenos Aires, Argentina. He is an active researcher in the field of semiconductor device physics and reliability, with experience in the academy and industry.
From 2001 to 2002, he joined the R&D group of Tower Semiconductor at Migdal Haemek Israel, making research on reliability of gate oxides and flash memories. Since 2003 he was a repeat visiting scientist of different Institutions: the IMM-CNR Catania, Italy, the Universitat Autónoma de Barcelona, Spain, the Minatec Institute in Grenoble, France, and Soochow University, China.
From 2006 to 2023, he worked as research staff for the National Council of Science and Technology (CONICET), wich is well embedded within international research collaboration. In the 2015 IEEE-IRPS edition, he was invited to present a review talk on CMOS Reliability, and in the 2019-IRPS edition he was awarded with the best paper recognition
From 2012 to 2014, he was visiting scientist at Technion Institute in Israel under a Marie Curie International Incoming Fellowship within the 7th European Community Framework Programme.
He managed several funded research projects in the field of radiation effects of CMOS technology and reliability of ultra-thin gates oxides, supported by CONICET, The Ministry of Science and Technology of the Argentinean Government and the Ministero degli Affari Esteri (MAE) of the Italian Government.At present, he is a research staff of the National Council of Science and Technology (CONICET), and a full professor at National Technological University (UTN) in Buenos Aires, Argentina. He is a reviewer of several scientific journals, author of four review articles, and of about 80 scientific and technical papers published in international peer-reviewed journals.
Concerning project management and research grants, I participated in several internationally funded research projects. My interest for applied science prompted me to start research collaborations with companies such as IBM-Fishkill-USA, Tower Jazz-Israel, SOITEC-France, and I am also a frequent scientific visitor of academic institutions as IMM-CNR-Italy, the IMEP-LAHC Lab.-Minatec site, Grenoble-France, the Autonomous University of Barcelona -Spain, and the Israel Institute of Technology-Technion.
Regarding the teaching activities, he holds a strong experience at undergraduate and graduate levels working in Physic and Electronic Engineering areas in different universities. At the present, I am full professor at National Technological University (UTN) in Buenos Aires, Argentina, where the supervision of PhD students and managerial responsibilities are relevant issues among my activities.
His actual research interests are in the field of reliability of III-V MOS stacks, SOI technology and radiation effects on semiconductors devices.
Acually, he is reviewer of several scientific journals, author of two review articles, and of about forty scientific and technical papers published in international peer-reviewed journals.
At present he works as principal Device Eng at Allegro Microsystems.
Address:Argentina