Spatio-Temporal Defect Generation Process in high/k dielectric layers: Correlated versus Uncorrelated Mechanisms
In this talk, we analyze the dependence of the Weibull slope (β) extracted from TDDB tests on HfO2 MOS capacitors (MOSCAPs) on the initial density of defects artificially induced by carefully tuned micro beam irradiation experiments with different carbon dosages. The consistent experimental trend of reducing β with increasing defect density was reproducible only with physics-based breakdown simulations that considered correlated defect generation in HfO2 and localized damage (partial percolation paths) traces created by the impinging ions. Scenarios of spatially random initial defect distribution and random stressinduced defect generation (in space and time) could not explain the experimental trends, confirming that correlated defect generation does exist in HfO2 thereby altering the conventional understanding of TDDB by quite a bit.
Date and Time
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- Date: 19 Oct 2023
- Time: 08:30 AM to 10:00 AM
- All times are (UTC-03:00) Montevideo
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- Julio Herrera y Reissig 565
- Montevideo, Montevideo
- Uruguay
- Building: Facultad de Ingeniería
- Room Number: Laboratorio de Software del IIE
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- Co-sponsored by Grupo de Microelectrónica, Facultad de Ingeniería, Universidad de la República
Speakers
Félix Palumbo of National Technological University (UTN), Buenos Aires
Biography:
I have received the MSc. (2000) and the PhD (2005) both in physics from the University of Buenos Aires, Argentina. I am an active researcher in the field of semiconductor device physics and reliability, transport in mesoscopic systems and oxide-semiconductor interfaces with experience in the academy and industry. From 2006 to 2023, I have been research staff of the National Council of Science and Technology (CONICET), well embedded within international research collaboration. In the 2015 IEEE-IRPS edition, I have been invited to present a review talk on CMOS Reliability, and in the 2019-IRPS edition I was awarded with the best paper recognition.
Concerning projects management and research grants, I participated in several international funded research projects. My interest for applied science prompted me to start research collaborations with companies such as IBM-Fishkill-USA, Tower Jazz-Israel, SOITEC-France, and I am also a frequent scientific visitor of academic institutions as IMM-CNR-Italy, the IMEP-LAHC Lab.-Minatec site, Grenoble-France, the Autonomous University of Barcelona -Spain, and the Israel Institute of Technology-Technion.
Regarding the teaching activities, I hold strong experience at undergraduate and graduate levels working in Physic and Electronic Engineering areas in different universities. At the present, I am full professor at National Technological University (UTN) in Buenos Aires, Argentina, where the supervision of PhD students and managerial responsibilities are relevant issues among my activities.
My actual research interests are in the field of reliability of III-V MOS stacks, SOI technology and radiation effects on semiconductors devices. I am reviewer of several scientific journals, author of two review articles, and of about forty scientific and technical papers published on international peer-reviewed journals, and an Electron Devices Society Distinguished Lecturer. At present, I am Principal Device Eng at Allegro Microsystems.