Electric Field imaging and dynamics by using Pockels effect in CdTe Radiation Detectors
The internal electric field plays a fundamental role in radiation detectors and access to it is therefore strategic. An important and widely used material in room temperature detectors is CdTe. This semiconductor exhibits the electro-optical Pockels effect, which is the linear response of the refraction index to an applied electric field. This allows to probe the electric field distribution inside the detectors with good spatial and temporal resolution.
In this talk I will show recent results related to optically induced electric field perturbations. Trap-related optical doping is demonstrated in Schottky devices. Original experimental approaches enable to highlight the local perturbation on the timescale of the charge carriers transit time.
A 2D Electric field imaging on such a timescale together with the visualization of free carrier motion is in progress, which is expected to provide a deep insight into charge transport mechanisms.
The underlying scope of the present talk is to point out how fixed and free charges, on their corresponding timescales, can be used to control the local electric field and the optical modulation. These are general concepts in semiconductors which, with suitable materials/design, can be exploited in optoelectronics.
Date and Time
Location
Hosts
Registration
- Date: 30 Jan 2024
- Time: 12:30 PM to 01:30 PM
- All times are (UTC-05:00) Eastern Time (US & Canada)
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- Philadelphia, Pennsylvania
- United States
- Building: BOSSONE 302, DREXEL UNIVERSITY
- Starts 25 January 2024 05:00 PM
- Ends 30 January 2024 12:00 PM
- All times are (UTC-05:00) Eastern Time (US & Canada)
- No Admission Charge
Speakers
ADRIANO COLA of Institute of Microelectronics and Microsystems (IMM) & National Council of Research (CNR), Leece, Italy
Biography:
Adriano Cola received the laurea degree in Physics (with honors) in 1986 and the Ph.D. in Physics in 1991 from the University of Bari discussing a thesis on electrical properties of deep levels and Schottky barriers. After post-doc studies at CNRS in Grenoble and at INFN in Pisa, in 1994 he joined the Institute of Microelectronic and Microsystems (IMM) of CNR in Lecce, becoming a permanent staff member in 1998; he is a senior researcher since 2001. In 2001 he was a Visiting Professor at the Drexel University of Philadelphia.
Dr. Cola’s main research interests are the current transport properties of semiconductor materials and devices. He has been working on different kind of radiation detectors: GaAs and CdTe X-ray detectors, NIR heterostructure photodetectors, and organic/inorganic solar cells. Other research activities are oriented to capacitive devices (MEMS, varactors) and to nanostructures (quantum dots, nanorods, tetrapods, nanowires...).
Dr. Cola is presently the IMM-responsible of the laboratory ELPHO, a CNR joint laboratory for ELectrical and PHOto-electrical advanced experiments. He is co-author of about 125 refereed journal papers and 120 conference contributions.