Distinguished Lecture: EDS Event: More-than-Moore miniaturisation with graphene and cubic silicon carbide
EDS Event: More-than-Moore miniaturisation with graphene and cubic silicon carbide
The Electron Devices Society Santa Clara Valley/San Francisco joint Chapter is hosting Prof. Francesca Iacopi. The title of the lecture is ‘More-than-Moore miniaturisation with graphene and cubic silicon carbide’
When/Where: 17th Apr, 2024, 5:30 pm - 7:00 pm. Hybrid event (Venue: Parlor B, Benson Memorial Center, Santa Clara University, 500 El Camino Real, Santa Clara, CA 95053)
(Benson Center is our student center and off-campus parking is a viable option, though not as safe as on-campus with a parking pass. We can arrange for free 2-hour parking for attendees. The parking permits can be picked up at the venue after they have parked their cars in the visitor lot.)
Campus map can be found here: https://www.scu.edu/map/
Note: To attend in person and obtain a free parking permit, MUST RSVP before 4/14/2024 5PM
If you face an issue with vtools registration send an email to hiuyung.wong at ieee.org to get the zoom link and indicate whether you are an IEEE member, IEEE EDS member, IEEE Student member
Contact: hiuyung.wong at ieee.org
Speaker: Prof. Francesca Iacopi
Abstract:
It is well known that harnessing graphene’s properties on a silicon platform could deliver a broad range of novel miniaturized andreconfigurable functionalities. It is less known that some key functionalities for MEMS/NEMS, nano-optics and metasurfaces can be uniquely unlocked by the combination of graphene and silicon carbide [1, 2, 3].
Over the last decade, we have developed an epitaxial graphene on silicon carbide on silicon technology that inherently delivers both capabilities. This platform allows to fabricate any complex graphene flat or 3D nanopattern in a site – selective fashion, ie without etching of the graphene, at the wafer -scale and with sufficient adhesion for integration [1, 4].
We will review the learnings from the development of this technology and some of its most promising applications. We show that the sheet resistance of epitaxial graphene on 3C-SiC on silicon is comparable to that of epitaxial graphene on SiC wafers, despite substantially smaller grains. We also indicate that the control of the graphene interfaces, particularly when integrated, can be a more important factor than achieving large grain sizes [4]. In addition, we show that well- engineered defects in graphene are preferable to defect -free graphene for most electrochemical applications. Promising examples of application of this technology in the More- than – Moore domain include integrated energy storage [5], MIR sensing and detection [6], and sensors for electro-encephalography [7, 8] for brain-computer interfaces [9]..
[1] B.Cunning et al, Nanotechnology 25 (32), 325301, 2014 [2] E.Romero et al., Physical Review Applied 13 (4), 044007, 2020 [3] P.Rufangura e
al, Journal of Physics: Materials 3 (3), 032005, 2020 [4] D.Katzmarek et al, Nanotechnology 34 (40), 405302, 2023 [4] A.Pradeepkumar et al, ACS
Applied Nano Materials 3 (1), 830-841, 2019 [5] M.Amjadipour, D.Su and F.Iacopi, Batteries & Supercaps 3 (7), 587-595, 2020 [6] P.Rufangura et
al, Nanomaterials 11 (9), 2339, 2021 [7] S.Faisal et al, Journal of Neural Engineering 18 (6), 066035, 2021 [8] S.Faisal et al, ACS Appl. Nano
Mater. 6 (7), 5440-5447, 2023 [9] F.Iacopi and CT Lin, Progress in Biomedical Eng. 4 (4), 043002, 2022.
Speaker Bio:
Professor Francesca Iacopi is an IEEE Fellow with over 20 years’ industrial and academic research expertise in semiconductor technologies, with 160 peer-reviewed publications and 10 granted US patents, spanning interconnects, CMOS devices and packaging. Her research focuses on the translation of basic scientific advances in nanomaterials and novel device concepts into implementable integrated technologies. She is known for her seminal work on the integration of porous dielectrics in on-chip interconnects, and for
the invention of the alloy -mediated epitaxial graphene platform on SiC/Si pseudo-substrates. She was recipient of an MRS Gold Graduate Student Award (2003), an Australian Research Council Future Fellowship (2012), a Global Innovation Award in Washington DC (2014) and was listed among the most innovative engineers by Engineers Australia (2018). Francesca is an IEEE EDS Distinguished Lecturer and serves regularly in technical and strategic committees for IEEE and the Materials Research Society.
She is an Elected Member to the IEEE EDS Board of Governors (2021, 2024) and serves in the Editorial Advisory Board for ACS Applied Nanomaterials, and the IEEE The Institute magazine. She is also the inaugural Editor-in-Chief of the IEEE Trans. on Materials for Electron Devices (IEEE T-MAT). She leads the Integrated Nanosystems Lab, in the Faculty of Engineering and IT, University of Technology Sydney. She is a Chief Investigator of the CoE in Transformative Meta-Optical Systems (TMOS), funded by the Australian Research Council.
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Date and Time
Location
Hosts
Registration
- Date: 17 Apr 2024
- Time: 05:30 PM to 07:00 PM
- All times are (UTC-07:00) Pacific Time (US & Canada)
-
Add Event to Calendar
- 500 El Camino Real
- Santa Clara University
- Santa Clara, California
- United States 95053
- Building: Benson Memorial Center
- Room Number: Parlor B
- Click here for Map
- Starts 13 March 2024 12:00 AM
- Ends 17 April 2024 05:00 PM
- All times are (UTC-07:00) Pacific Time (US & Canada)
- No Admission Charge
Speakers
Prof. Francesca Iacopi of Faculty of Engineering and IT, University of Technology Sydney
More-than-Moore miniaturisation with graphene and cubic silicon carbide
It is well known that harnessing graphene’s properties on a silicon platform could deliver a broad range of novel miniaturized andreconfigurable functionalities. It is less known that some key functionalities for MEMS/NEMS, nano-optics and metasurfaces can be uniquely unlocked by the combination of graphene and silicon carbide [1, 2, 3].
Over the last decade, we have developed an epitaxial graphene on silicon carbide on silicon technology that inherently delivers both capabilities. This platform allows to fabricate any complex graphene flat or 3D nanopattern in a site – selective fashion, ie without etching of the graphene, at the wafer -scale and with sufficient adhesion for integration [1, 4].
We will review the learnings from the development of this technology and some of its most promising applications. We show that the sheet resistance of epitaxial graphene on 3C-SiC on silicon is comparable to that of epitaxial graphene on SiC wafers, despite substantially smaller grains. We also indicate that the control of the graphene interfaces, particularly when integrated, can be a more important factor than achieving large grain sizes [4]. In addition, we show that well- engineered defects in graphene are preferable to defect -free graphene for most electrochemical applications. Promising examples of application of this technology in the More- than – Moore domain include integrated energy storage [5], MIR sensing and detection [6], and sensors for electro-encephalography [7, 8] for brain-computer interfaces [9]..
[1] B.Cunning et al, Nanotechnology 25 (32), 325301, 2014 [2] E.Romero et al., Physical Review Applied 13 (4), 044007, 2020 [3] P.Rufangura e
al, Journal of Physics: Materials 3 (3), 032005, 2020 [4] D.Katzmarek et al, Nanotechnology 34 (40), 405302, 2023 [4] A.Pradeepkumar et al, ACS
Applied Nano Materials 3 (1), 830-841, 2019 [5] M.Amjadipour, D.Su and F.Iacopi, Batteries & Supercaps 3 (7), 587-595, 2020 [6] P.Rufangura et
al, Nanomaterials 11 (9), 2339, 2021 [7] S.Faisal et al, Journal of Neural Engineering 18 (6), 066035, 2021 [8] S.Faisal et al, ACS Appl. Nano
Mater. 6 (7), 5440-5447, 2023 [9] F.Iacopi and CT Lin, Progress in Biomedical Eng. 4 (4), 043002, 2022.
Biography:
Professor Francesca Iacopi is an IEEE Fellow with over 20 years’ industrial and academic research expertise in semiconductor technologies, with 160 peer-reviewed publications and 10 granted US patents, spanning interconnects, CMOS devices and packaging. Her research focuses on the translation of basic scientific advances in nanomaterials and novel device concepts into implementable integrated technologies. She is known for her seminal work on the integration of porous dielectrics in on-chip interconnects, and for
the invention of the alloy -mediated epitaxial graphene platform on SiC/Si pseudo-substrates. She was recipient of an MRS Gold Graduate Student Award (2003), an Australian Research Council Future Fellowship (2012), a Global Innovation Award in Washington DC (2014) and was listed among the most innovative engineers by Engineers Australia (2018). Francesca is an IEEE EDS Distinguished Lecturer and serves regularly in technical and strategic committees for IEEE and the Materials Research Society.
She is an Elected Member to the IEEE EDS Board of Governors (2021, 2024) and serves in the Editorial Advisory Board for ACS Applied Nanomaterials, and the IEEE The Institute magazine. She is also the inaugural Editor-in-Chief of the IEEE Trans. on Materials for Electron Devices (IEEE T-MAT). She leads the Integrated Nanosystems Lab, in the Faculty of Engineering and IT, University of Technology Sydney. She is a Chief Investigator of the CoE in Transformative Meta-Optical Systems (TMOS), funded by the Australian Research Council..
Agenda
When/Where: 17th Apr, 2024, 5:30 pm. Hybrid event (Venue: Parlor B, Benson Memorial Center, Santa Clara University, 500 El Camino Real, Santa Clara, CA 95053)
Speaker: Prof. Francesca Iacopi
Abstract:
It is well known that harnessing graphene’s properties on a silicon platform could deliver a broad range of novel miniaturized andreconfigurable functionalities. It is less known that some key functionalities for MEMS/NEMS, nano-optics and metasurfaces can be uniquely unlocked by the combination of graphene and silicon carbide [1, 2, 3].
Over the last decade, we have developed an epitaxial graphene on silicon carbide on silicon technology that inherently delivers both capabilities. This platform allows to fabricate any complex graphene flat or 3D nanopattern in a site – selective fashion, ie without etching of the graphene, at the wafer -scale and with sufficient adhesion for integration [1, 4].
We will review the learnings from the development of this technology and some of its most promising applications. We show that the sheet resistance of epitaxial graphene on 3C-SiC on silicon is comparable to that of epitaxial graphene on SiC wafers, despite substantially smaller grains. We also indicate that the control of the graphene interfaces, particularly when integrated, can be a more important factor than achieving large grain sizes [4]. In addition, we show that well- engineered defects in graphene are preferable to defect -free graphene for most electrochemical applications. Promising examples of application of this technology in the More- than – Moore domain include integrated energy storage [5], MIR sensing and detection [6], and sensors for electro-encephalography [7, 8] for brain-computer interfaces [9]..
[1] B.Cunning et al, Nanotechnology 25 (32), 325301, 2014 [2] E.Romero et al., Physical Review Applied 13 (4), 044007, 2020 [3] P.Rufangura e
al, Journal of Physics: Materials 3 (3), 032005, 2020 [4] D.Katzmarek et al, Nanotechnology 34 (40), 405302, 2023 [4] A.Pradeepkumar et al, ACS
Applied Nano Materials 3 (1), 830-841, 2019 [5] M.Amjadipour, D.Su and F.Iacopi, Batteries & Supercaps 3 (7), 587-595, 2020 [6] P.Rufangura et
al, Nanomaterials 11 (9), 2339, 2021 [7] S.Faisal et al, Journal of Neural Engineering 18 (6), 066035, 2021 [8] S.Faisal et al, ACS Appl. Nano
Mater. 6 (7), 5440-5447, 2023 [9] F.Iacopi and CT Lin, Progress in Biomedical Eng. 4 (4), 043002, 2022.
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