Prof. Michael Schroeter of Technical University Dresden, Germany

SiGe HBT technology and its combination with dense digital CMOS provides a highly attractive platform for compact integrated mm-wave and THz systems. This talk introduces the architecture of modern SiGe HBTs. Next successful numerical simulation (TCAD) approaches are discussed that can support device design. Then, an industry-standard compact model for advanced SiGe HBTs is built step-by-step, addresses the information needs of circuit designers and process engineers. Examples of comparisons of the various models with measurements are provided and possible pitfalls are discussed. Two case studies are presented that show the application of the various modeling tools to process development, generating PDK models, and technology roadmap generation.

Biography:

Michael Schröter (Senior Member, IEEE) received the Dr.-Ing. and venia-legendi degrees in electrical engineering from Ruhr-University Bochum, Bochum, Germany, in 1988 and 1994, respectively. During eight years in industry, he held engineering and management positions with Nortel/BNR, Ottawa, Canada, and with Rockwell/Conexant and RFNano, Newport Beach, CA, USA. Since 1999, he has been a Full Professor with Technical University Dresden, Germany. He was the Co-Founder of XMOD Technologies, Bordeaux, France, and the Technical Project Manager for the EU projects DOTFIVE and DOTSEVEN that led to SiGe HBT technologies with world-record performance. He is the author of the industry standard compact bipolar transistor model HICUM, and his team created the ITRS/IRDS data for SiGe HBTs.

Address:Germany