Radiation Resistant Graphene-based photovoltaics for lunar surface applications
Radiation Resistant Photovoltaics
Radiation resistant photovoltaics (PV) for lunar surface applications has been increasingly important for application on the lunar surface. Graphene-based Schottky diodes with semiconductor various radiation resistant layers is a promising choice for lunar PV due to (i) graphene high photon transparency (ii) and radiation resistant semiconducting layers such as GaN. We propose a G/n-GaN Schottky diode where the metal is replaced by graphene grown on top of a thin oxide layer resting on the semiconductor. Photoexcitation of carriers occurs in both graphene and the semiconductor regions. the oxide layer prevents or reduces recombination of photo-carriers. we propose a model where photo-generated electrons cross the PV device in both directions (from Gr to the semiconductor and vice versa) via two mechanisms by (a) thermionic emission and (b) quantum tunneling. We outline the method of obtaining net current densities (thermionic and tunneling). Tunneling transmission and thermionic carrier escape and current are outlined along with the advantage of high current density generation in the harsh lunar surface environment.
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- Date: 25 Sep 2024
- Time: 06:30 PM to 07:30 PM
- All times are (UTC-04:00) Eastern Time (US & Canada)
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- 204 Monroe Ave
- Physics and Engineering Dept
- University of Scranton, Scranton, Pennsylvania
- United States 18510
- Building: Loyola Science Center (LSC)
- Room Number: 334
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- Co-sponsored by EDS Student Branch, Physics & Engineering Dept, University of Scranton
- Starts 13 June 2024 12:00 AM
- Ends 25 September 2024 12:00 AM
- All times are (UTC-04:00) Eastern Time (US & Canada)
- No Admission Charge
Speakers
Argyrios of University of Scranton
Radiation resistant photovoltaics for lunar surface applications
Biography:
Dr Varonides is currently a professor of Physics and Electrical Engineering at the University of Scranton. His current research interests include quantum transport in graphene-based (nano) electronic devices, graphene-based Schottky photovoltaic devices (field and thermionic emission, tunneling processes), physics and applications of superconducting devices (Josephson junctions), electrodynamics of meta-materials, nano-electromechanical systems (NEMS), and quantum dots. Dr Varonides’ current teaching includes major physics and engineering courses such as applied electromagnetic theory, modern electronic devices, nanostructures and engineering math.
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Address:204 Monroe Ave, Physics and Engineering Dept, University of Scranton, Pennsylvania, United States, 18510
Agenda
Professional meeting at the University of Scranton
The most radiation resistant semiconductor layer is by far GaN. A graphene-oxide-GaN Schottky diode is proposed for high current generation