EDS Distinguished Lecture: Compacting Models: The Art of Compact Modeling (Unification of Compact Models with the Unified Regional Modeling Approach)
Compact Models (CMs) for circuit simulation have been at the heart of CAD tools for bridging circuit design and technology development over the past decades. In this talk, we begin with an overview of the historical role of CMs and fundamental equations. Evolution of MOSFET CMs, from bulk to SOI and FinFETs, is reviewed and their inter-relationships discussed. Unification of CMs with the unified regional modeling (URM) approach is presented, together with model validation with numerical data and verification with experimental data. Model extension to III-V HEMTs including 2-dimensional electron gas (2DEG) in multiple sub-bands and trap-charge effects is presented.
Date and Time
Location
Hosts
Registration
- Date: 16 Oct 2024
- Time: 04:45 PM to 06:30 PM
- All times are (UTC-04:00) Eastern Time (US & Canada)
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- 154 Summit Street, Newark, NJ 07102
- NJIT
- Newark, New Jersey
- United States 07102
- Building: ECEC Building
- Room Number: ECE 202
- Click here for Map
- Contact Event Hosts
-
Dr. Ajay K. Poddar, Email:akpoddar@ieee.org
Dr. Edip Niver, email: edip.niver@njit.edu
Dr. Durga Misra, Email: dmisra@ieee.org
Dr. Anisha M. Apte, Email: anisha_apte@ieee.org
- Co-sponsored by IEEE North Jersey Section
- Starts 14 August 2024 12:00 AM
- Ends 16 October 2024 03:00 PM
- All times are (UTC-04:00) Eastern Time (US & Canada)
- No Admission Charge
Speakers
Dr. Xing Zhou of Singapore
Compacting Models: The Art of Compact Modeling (Unification of Compact Models with the Unified Regional Modeling Approac
Compact Models (CMs) for circuit simulation have been at the heart of CAD tools for bridging circuit design and technology development over the past decades. In this talk, we begin with an overview of the historical role of CMs and fundamental equations. Evolution of MOSFET CMs, from bulk to SOI and FinFETs, is reviewed and their inter-relationships discussed. Unification of CMs with the unified regional modeling (URM) approach is presented, together with model validation with numerical data and verification with experimental data. Model extension to III-V HEMTs including 2-dimensional electron gas (2DEG) in multiple sub-bands and trap-charge effects is presented.
Biography:
Dr. Xing Zhou obtained his B.E. degree in electrical engineering from Tsinghua University in 1983, M.S. and Ph.D. degrees in electrical engineering from the University of Rochester in 1987 and 1990, respectively. He has been with the School of Electrical and Electronic Engineering, Nanyang Technological University (NTU), Singapore from 1992 to 2024. His past research interests include Monte Carlo simulation of photocarrier transport and ultrafast phenomena as well as mixed-mode circuit simulation and CAD tool development. His research at NTU mainly focuses on nanoscale CMOS compact model development. His research group has been developing a unified core model for nanoscale bulk, SOI, double-gate, nanowire CMOS, as well as III-V HEMTs. He has given more than 150 IEEE EDS distinguished lectures and invited talks at various universities as well as industry and research institutions. Dr. Zhou was the founding chair for the Workshop on Compact Modeling (WCM) in association with the NSTI Nanotechnology Conference (2002–2018). He was an editor for the IEEE Electron Device Letters (2007–2016), a guest Editor-in-Chief for the special issue of the IEEE Transactions on Electron Devices (Feb. 2014) on compact modeling of emerging devices, and a member of the Modeling & Simulation subcommittee for IEDM (2016, 2017). He was an Elected Member-at-Large of EDS Board of Governors (2004–2009; 2011–2016) and served as Vice-President for Regions/Chapters (2013–2015). He has been an EDS distinguished lecturer since 2000. He currently serves as chair for the RS/EPS/EDS Singapore Joint Chapter.
Email:
Address:EDS Distinguished Speaker, Singapore, Singapore, Singapore
Agenda
Event Time: 4:45 PM to 6:30 PM
4:45 PM Refreshments and Networking
5:00 PM Talk by Dr. Xing Zhou EDS DL, Singapore
Seminar is in ECEC 202.
All Welcome: There is no fee/charge for attending IEEE technical seminar. You don't have to be an IEEE Member to attend. Refreshments are free for all attendees. Please invite your friends and colleagues to take advantage of this Invited Distinguished Lecture.