Reliability of Metal Gate / High-K CMOS devices
ABSTRACT
Aggressively scaled transistor technologies with metal gate/high-k stacks encounter additional reliability challenges beside bias temperature instability (BTI) in PMOS and NMOS devices, time-dependent dielectric breakdown and hot carrier degradation. Time-zero variability and variability induced by device aging is a growing concern which needs to be modeled using stochastic processes. The physical nature of the stochastic process remains under debate and to support model development efforts large statistical data sets are essential. In addition, self- heating during reliability testing can be observed in novel device structures like bulk FinFET, SOI FinFETs, FDSOI and gate-all-around devices and needs proper attention. Furthermore, to increase the confidence in the discrete device reliability models, device-to-circuit correlations need to be established. In this presentation we discuss how to obtain stochastic BTI data for discrete SRAM and logic devices beyond 3 sigmas, address device-to-circuit correlations using ring- oscillators and explore self-heating effects in FinFET and SOI devices.
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- Date: 23 Nov 2024
- Time: 12:00 AM UTC to 01:30 AM UTC
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- 6455 Lusk Blvd,
- San Diego, California
- United States
- Building: Qualcomm Q Auditorium
Speakers
Dr. Andreas Kerber
Reliability of Metal Gate / High-K CMOS devices
ABSTRACT
Aggressively scaled transistor technologies with metal gate/high-k stacks encounter additional reliability challenges beside bias temperature instability (BTI) in PMOS and NMOS devices, time-dependent dielectric breakdown and hot carrier degradation. Time-zero variability and variability induced by device aging is a growing concern which needs to be modeled using stochastic processes. The physical nature of the stochastic process remains under debate and to support model development efforts large statistical data sets are essential. In addition, self- heating during reliability testing can be observed in novel device structures like bulk FinFET, SOI FinFETs, FDSOI and gate-all-around devices and needs proper attention. Furthermore, to increase the confidence in the discrete device reliability models, device-to-circuit correlations need to be established. In this presentation we discuss how to obtain stochastic BTI data for discrete SRAM and logic devices beyond 3 sigmas, address device-to-circuit correlations using ring- oscillators and explore self-heating effects in FinFET and SOI devices.
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