Ohm to Arora: A New Paradigm for Nanoscale Devices and Circuits
A newfangled paradigm through deployment of the nonequilibrium Arora’s distribution function (NEADF) for resistance surge in low-dimensional nano-resistors is presented, with applications to carbon-based devices. The key outcome is that the Ohm’s Law with linear I-V characteristics cannot be used for devices approaching micro- and nano-scale. A nano-resistor, in addition to having ohmic resistance, also necessitates the value of the critical voltage for its complete description. This critical voltage is proportional to the length of the resistor. In macro resistors of yesteryears, the critical voltage is much larger than the applied voltage, with infinity as the default value. However, as devices are scaled down to the nanometer dimensions, the critical voltage is much lower than the applied voltage, including the traditional 5 V or even 1 V as the higher logic level for VLSI devices. As the applied voltage becomes larger than the critical voltage, Arora’s Law predicts current saturation due to velocity saturation. The random velocity vectors in equilibrium transform to streamlined velocity vectors in a high electric field that is necessarily high in scaled down dimensions. The saturation current is thus limited by the intrinsic velocity vectors that become streamlined and hence ballistic in the sense that scattering does not play any active role in saturation. As I-V characteristics become nonlinear, the distinction between direct and differential resistance takes on an increasing importance due to dramatic rise in the differential resistance. The experimental nonlinear I-V characteristics, when voltage across the length of a resistor is higher than its critical value, defy ohmic and ballistic transmission through a nano-resistor. Arora’s Law embraces well the Ohm’s Law when applied voltage is smaller than the critical voltage. It is shown that the smaller-length resistor becomes more resistive in a circuit where two resistors of the same ohmic value are used in series or parallel configuration. Transit time delay gives way to enhanced RC time delay and is the major limiting factor for signal propagation in ultra-large scale integration (ULSI) on a chip. Inductive L/R time constants are suppressed. The lecture will cover landscape from basic sciences to engineering with a touch of liberal arts that is talk of the day for an outcome-based education (OBE) making Engineering an Art in the Application of the Liberal Arts kindling STEAM (Science, Technology, Engineering, Arts, and Mathematics).
Date and Time
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- Date: 03 Mar 2017
- Time: 12:00 AM to 02:00 AM
- All times are (GMT-07:00) US/Mountain
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- Science and Engineering Building
- University of Colorado at Colorado Springs
- Colorado Springs, Colorado
- United States 80910
- Building: Osburne Center, B 134
- Contact Event Host
- Co-sponsored by russbogardus@comcast.net
- Starts 15 February 2017 12:00 AM
- Ends 02 March 2017 10:00 PM
- All times are (GMT-07:00) US/Mountain
- No Admission Charge