How (and why) Si won the race toward millimeter-wave ICs

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From Ka-band satellite applications to automotive radars at 77 GHz, systems in the upper microwave and millimeter-wave ranges are enabled by integrated circuits on Silicon wafers. And, judging from current publication activities, this trend will continue for the foreseeable future, and toward even higher frequencies, well into the THz range.

When it comes to its physical properties, Si is an unlikely competitor for group III-V materials such as GaAs or InP. Lossy substrates and lower electron mobility, for instance. So why is it so successful? Cost is the easiest answer, but, unless we're talking truly huge market sizes, GaAs ICs can be quite cost-competitive, area-wise.

Silicon as a substrate for microwave circuits has been contemplated since at least 1965. Until the mid 1990s, Silicon monolithic microwave ICs (MMICs) tried to imitate GaAs, with limited success. The advent of Si/SiGe heterojunction bipolar transistors changed its approach drastically. The integrability of Si/SiGe HBTs into established bipolar and BiCMOS processes allows microwave and millimeter-wave chips with a high integration density, combined with digital functionality, and occasionally even micro-electro-mechanical structures.

Using results from the literature as well as my own research, I will talk about the history of Si MMICs, some milestones, as well as current trends.

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  • Date: 09 Feb 2025
  • Time: 04:00 PM UTC to 05:30 PM UTC
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  • Starts 11 December 2024 11:00 PM UTC
  • Ends 08 February 2025 11:00 PM UTC
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  Speakers

Dr.-Ing. Hermann Schumacher, Professor, Universität Ulm (retired)

Biography:

Hermann Schumacher received his Diploma in Electrical Engineering in 1982, and his Doctorate in Engineering (Dr.-Ing., with highest distinction) in 1986, both from RWTH Aachen University. In 1986, he joined Bell Communications Research in Red Bank, NJ, USA, researching compound semiconductor devices for optoelectronic integration of high-speed fiberoptic applications. Among other things, he was involved in early work on InP/InGaAs heterojunction bipolar transistors (HBTs).

In 1990, he joined Ulm University, Ulm, Germany. There, he and his research group worked on Si/SiGe HBTs (initially with the Daimler Research Center in Ulm), and, increasingly, microwave and millimeter-wave integrated circuits. From 2000 until 2016, he led the Competence Center on Integrated Circuits in Communications, a public-private partnership. Investigated applications ranged from short-range ultra-wideband radars for vital sign detection and security systems to complex frontend ICs for active electronically scanned satellite antennas.

From 2011 until 2022, Professor Schumacher developed and directed the School of Advanced Professional Studies, the continuing education unit of Ulm University.

In 2023, he retired from his positions at Ulm University, but is still actively pursuing his research interests, as well as teaching continuing education courses.

Address:Germany