Advanced Substrates for Chiplets and Heterogeneous Integration

#packaging #3d #semiconductor

Today, most of the package substrates for HPC driven by AI (artificial intelligence) are made by the 2.5D IC integration. In general, for 2.5D or CoWoS (chip on wafer on substrate), the SoC and high bandwidth memories (HBMs) are supported by a TSV-interposer and then solder bump and underfill on a build-up package substrate. However, because of the ever-increasing size of the TSV-interposer, the manufacturing yield loss of the TSV-interposer is becoming unbearable. Front-end integration of some of the chiplets (before package heterogeneous integration) can yield a smaller package size and a better performance (3.5D IC integration). In the past few years, 2.3D IC integration or CoWoS-R is getting lots of traction. The motivation is to replace the TSV-interposer with a fan out fine metal L/S redistribution-layer (RDL)-substrate (or organic-interposer). In general, for 2.3D, the package substrate structure (hybrid substrate) consists of a build-up package substrate, solder joints with underfill, and the organic-interposer. In this lecture, the introduction, recent advances, and trends in the substrates of 3.5D IC integration, 3.3D IC integration, 3D IC integration, 2.5D IC integration, 2.3D IC integration, 2.1D IC integration, 2D IC integration, fan-out RDL, embedded Si-bridge, CoWoS-R, CoWoS-L, CPO, and glass core for HPC driven by AI will be discussed. Some recommendations will be provided.

• Date: 16 Apr 2025
• Time: 11:30 PM UTC to 12:45 AM UTC
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• 6455 Lusk Blvd
• San Diego, California
• United States 92121
• Building: Qualcomm Building Q Auditorium

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• Starts 05 March 2025 08:00 AM UTC
• Ends 16 April 2025 09:00 PM UTC
• No Admission Charge

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