Advanced Logic Scaling Using Monolithic 3D Integration

#EDS #UB #Buffalo

Advanced Logic Scaling Using Monolithic 3D Integration

Marko Radosavljevic

Intel Corporation

Group leader in monolithic 3D integration in Components Research
IEEE EDS Distinguished Lecturer

Abstract: Transistor scaling has been one of the key engines driving the semiconductor industry for many decades
now. Beyond traditional (Dennard) scaling of physical dimensions and supply voltages, innovations such as new materials and new architectures are being constantly and regularly deployed to enable introduction of new technology
nodes.
Main new architectural changes revolve around moving from planar device geometries to more 3D – first finFETs and most recently gate-all-around (GAA). These changes provide significant opportunities for scaling both due to
(1) enabling gate pitch scaling because of improved short channel effects and (2) higher performance because device
width is decoupled from the planar area. To enable these architectures, technology teams delivered many materials and
process innovations due to increased physical aspect ratios as well as a need for very conformal depositions.
Extending further into this third dimension, researchers in academia, consortia and industry are very interested
in exploring device stacking as a means of increasing both functionality and logic scaling. While this appears as a natural
next step, it also provides an open wide space ripe for new materials, integration approaches and applications. As such
much of the early work has been focused on both (1) design technology co-optimization (DTCO) to identify needed ingredients to enable scaling and (2) demonstrating those ingredients into physical implementations in Si.
In this presentation, I will provide a general overview of monolithic 3D integration options, provide a connection of
this research is current and state-of-the-art and highlights experimental status, challenges, and prospects.

Bio:  Marko Radosavljević received his PhD in physics from the University of Pennsylvania in 2001, after which he spent 2 years as a
postdoctoral researcher in the Physical Sciences Department at IBM T.J. Watson Research Center in Yorktown Heights, NY.
In 2003, he joined Components Research (since renamed Technology Research) division of Intel Corporation, Hillsboro, OR.
Marko’s external visibility has mostly been in researching different non-Si materials and transistors, such as InP, InSb, GaN material
families as well as carbon nanotubes for applications in logic, RF and power delivery.
Since 2019, he is leading a group in monolithic 3D integration in Components Research, studying how to enable new functionalities and provide ultimate density improvements in Si microelectronics. He has served a larger community as editor of EDL and
committee member for various international conferences, including IEDM, and is currently IEEE EDS Distinguished Lecturer and editor of IEEE Transactions on Materials for Electron Devices. He has received 2 Intel Achievement Awards (highest technical award
within the company, awarded annually), authored and co-authored many research manuscripts (including the IEDM paper of the decade from 2001-2010 and VLSI test of time paper awarded in 2022), and holds numerous granted US and international patents.is an Associate Professor and the Peter & Susanne Armstrong Distinguished Scholar in Electrical and Systems Engineering as well as Materials Science and Engineering at the University of Pennsylvania (Penn). Deep completed his undergraduate degree in Metallurgical Engineering from the Indian Institute of Technology in Varanasi and his Ph.D. in Materials Science and Engineering at Northwestern University. Deep was a Resnick Prize Postdoctoral Fellow at Caltech before joining Penn to start his own research group. His research interests broadly lie at the intersection of new materials, surface science, and solid-state devices for computing, opto-electronics, and energy harvesting applications, in addition to the development of correlated and functional imaging techniques. Deep’s research has been widely recognized with several awards from professional societies, funding bodies, industries as well as private foundations, the most notable ones being the Optica Adolph Lomb Medal, the Bell Labs Prize, the AVS Peter Mark Memorial Award, IEEE Photonics Society Young Investigator Award, IEEE Nanotechnology Council Young Investigator Award, IUPAP Early Career Scientist Prize in Semiconductors and the Alfred P. Sloan Fellowship. He has published over 150 journal papers with more than 21000 citations and holds several patents. He serves as the Associate Editor for ACS Nano Letters and has been appointed as a Distinguished Lecturer for the IEEE Nanotechnology Council for 2025.

Place: 230A Davis Hall, University at Buffalo, North Campus, Buffalo, NY 14260

Date and time: April 4, Friday 2025, 2pm EST

Host: Vasili Perebeinos (vasilipe@buffalo.edu) on behalf of the IEEE Buffalo Section

• Date: 04 Apr 2025
• Time: 06:00 PM UTC to 07:00 PM UTC
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• 230A Davis Hall
• Buffalo, New York
• United States 14260

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• Contact Event Hosts

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  Host: Vasili Perebeinos (vasilipe@buffalo.edu) on behalf of the IEEE Buffalo Section

• Co-sponsored by IEEE Electron Devices Society (EDS) Distinguished Lecture - Marko Radosavljevic

• Starts 20 March 2025 04:00 AM UTC
• Ends 04 April 2025 04:00 AM UTC
• No Admission Charge

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