Advancing Compact Modeling: Highlights from Dr. Xing Zhou’s IEEE Seminar
Unified Modeling for Modern Devices: Insights from Dr. Xing Zhou
Dr. Xing Zhou, a semiconductor modeling expert, presented a seminar on the evolution of compact models—vital tools linking device behavior to circuit design.
He traced model development from bulk MOSFETs to FinFETs and GAA transistors, highlighting the need for more accurate models as devices grow more complex.
The focus was on his Unified Regional Modeling (URM) approach, which uses surface-potential-based equations to unify models across device types and operating regions, improving accuracy and reducing duplication.
Dr. Zhou demonstrated URM's application to advanced devices like GaN and InGaAs HEMTs, incorporating effects such as 2DEG, trapping, and self-heating. He introduced a scalable model validated by simulations and measurements, along with a practical subcircuit for circuit-level use.
He closed by addressing adoption challenges, emphasizing the disconnect between researchers, EDA vendors, foundries, and designers.
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- Xi’an Jiaotong-Liverpool University
- 111 Ren’ai Road
- Suzhou, Jiangsu
- China 215123
- Building: EE
- Room Number: 505
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- Co-sponsored by XJTLU Advanced Semiconductor Research Center
Speakers
Dr. Xing Zhou
Compacting Models: The Art of Compact Modeling
Compact Models (CMs) for circuit simulation have been at the heart of CAD tools for bridging circuit design and technology development over the past decades. In this talk, we begin with an overview of the historical role of CMs and fundamental equations. Evolution of MOSFET CMs, from bulk to SOI and FinFETs, is reviewed and their inter relationships discussed. Unification of CMs with the unified regional modeling (URM) approach is presented, together with model validation with numerical data and verification with experimental data. Model extension to III V HEMTs including 2 dimensional electron gas (2DEG) in multiple sub bands and trap charge effects is presented.
Biography:
Dr. Xing Zhou obtained his B.E. degree in electrical engineering from Tsinghua University in 1983, M.S. and Ph.D. degrees in electrical engineering from the University of Rochester in 1987 and 1990, respectively. He has been with the School of Electrical and Electronic Engineering, Nanyang Technological University (NTU), Singapore from 1992 to 2024. His past research interests include Monte Carlo simulation of photocarrier transport and ultrafast phenomena as well as mixed mode circuit simulation and CAD tool development. His research at NTU mainly focuses on nanoscale CMOS compact model development. His research group has been developing a unified core model for nanoscale bulk, SOI, double gate, nanowire CMOS, as well as III V HEMTs. He has given more than 150 IEEE EDS distinguished lectures and invited talks at various universities as well as industry and research institutions. Dr. Zhou was the founding chair for the Workshop on Compact Modeling (WCM) in association with the NSTI Nanotechnology Conference (2002 - 2018). He was an editor for the IEEE Electron Device Letters (2007 - 2016), a guest Editor in Chief for the special issue of the IEEE Transactions on Electron Devices (Feb. 2014) on compact modeling of emerging devices, and a member of the Modeling & Simulation subcommittee for IEDM (2016, 2017). He was an Elected Member at Large of EDS Board of Governors (2004 - 2009; 2011 - 2016) and served as Vice President for Regions/Chapters (2013 - 2015). He has been an EDS Distinguished Lecturer since 2000. He is a Life Senior Member of the IEEE and currently serves as chair for the RS/EPS/EDS Singapore Joint Chapter.