Tanya of MDA

Gallium nitride (GaN) power devices have only recently become available commercially from different copmpanies. The new devices enable the design of converters at higher frequencies and efficiencies than those achievable with conventional Si devices. This webinar will review the characteristics and figures of marit of different types GaN devices enhancement and depletion mode and will give the status of vertical GaN power devices. In addition, the challenges encountered in GaN-based converter design are considered, such as the consequences of faster switching on gate driver design and board layout. Other issues such as unique reverse conduction behavior, dynamic R_{DS_ON}, breakdown mechanisms, thermal design, device availability, and reliability qualification will be also discussed.

Biography:

Tanya Kirilova Gachovska received her M.Eng., and Ph.D. degrees, all in Electrical Engineering, from the University of Ruse, Bulgaria, in 1995 and 2003. She earned her second Ph.D. Degree in Electrical Engineering (Power Electronics), at the University of Nebraska-Lincoln (UNL), Lincoln, USA in 2012. Her Ph.D. thesis was “Modeling of Power Semiconductor Devices”. She worked as an Assistant Professor at the University of Ruse from 1999 to 2003. She conducted research from 2004 to 2006 and taught for a semester in 2006 at McGill University in Montréal. She worked as a Postdoctoral Research Scientist in the area of Pulsed Electric Fields at UNL from 2012 to 2013. During her Ph.D. studies at UNL, she taught various courses and labs, and continued a collaboration in Pulsed Electric Fields research with McGill University, University of Ruse, University of Djiali Liabes, Sidi Bel Abbes, Algeria and École Nationale Supérieure Agronomique, El Harrach, Algeria. She worked for Solantro Semiconductor, Corp., Ottawa for seven years and now she works for MDA Space Montreal.  Dr. Gachovska authored or coauthored more than 30 technical papers and conference presentations, two books, and two book chapters and holds a world patent in Pulsed Electric Fields. In 2019 Dr. Gachovska become a professional engineer of Ontario. She was PELS Ottawa chair and now PELS Montreal chair. She is PEDCC standard chair and chair for IEEE Standards for “Datasheet Parameters and Tests for Integrated Gate Drivers ” and “Datasheet Parameters and Tests for UVC LED Air Disinfection Chambers”  Dr. Gachovska is a senior IEEE member.

Email:

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