FET100 Celebration: Colloquium on Industry–Academia–Research Collaborative Innovation in GaN Technology
In celebration of the 100th anniversary of the invention of the field-effect transistor (FET), the FET100 Celebration Activity: Colloquium on Industry–Academia–Research Collaborative Innovation in GaN Technology was successfully held at Room BS4114, IBSS Building, SIP South Campus of Xi’an Jiaotong-Liverpool University (XJTLU). The event was jointly organized by the IEEE CASS-EDS Suzhou Joint Chapter, the IEEE CASS-EDS XJTLU Student Branch Chapter, and the XJTLU Advanced Semiconductor Research Center. The colloquium was initiated and chaired by Associate Professor Wen Liu, and jointly coordinated by Ms. Yu Hu and Ms. Jiao Li, attracting enthusiastic participation from faculty, students, and industry representatives.
This colloquium focused on the cutting-edge advancements and interdisciplinary collaboration in Gallium Nitride (GaN) power electronics, featuring keynote presentations from experts representing Nanjing University, Innoscience Technology, and XJTLU, as well as research showcases by student teams working on wide-bandgap semiconductor technologies.
Expert Keynotes: Deep Dive into GaN Technologies and Applications
The event opened with a keynote speech by Dr. Dunjun Chen, Vice Dean of the School of Electronic Science and Engineering at Nanjing University. In his talk, “Gate Dielectric Technology and Reliability Mechanism of GaN-based Power Devices”, Dr. Chen elaborated on the intrinsic material properties of GaN — including its wide bandgap, strong polarization, and significant lattice mismatch — and presented his team's latest research in BaTiO₃-based gate dielectric engineering. With optimized annealing at 400–500°C, the team achieved record device performance: a breakdown voltage of 1910 V, a figure-of-merit of 1.05 GW/cm², and an average electric field strength of 1.4 MV/cm. Furthermore, the devices demonstrated an exceptional on/off current ratio of 4.1×10⁹, subthreshold swing of 70.6 mV/dec, and saturation current of 508 mA/mm. Dr. Chen also introduced advancements in p-NiO gate structures, which significantly improved hole concentration and carrier mobility.
The second talk was delivered by Dr. Jiangmin Gu, Associate Professor at the School of Intelligent Engineering, XJTLU. His presentation, “Sub-Block Design for Monolithic PMIC Based on GaN HEMT Technology”, focused on system-level design of monolithic GaN power management ICs (PMICs). Highlighting the superior performance of GaN in high-voltage, high-frequency, and high-temperature applications, Dr. Gu presented multiple functional circuit blocks including temperature sensors, voltage reference generators, over-temperature protection (OTP), undervoltage lockout (UVLO), and PWM control modules. His team’s work bridges the gap between device-level modeling (using calibrated ASM-HEMT models) and circuit-level integration, demonstrating high efficiency and compactness in 48V-to-1V DC-DC converter designs.
Following a short intermission, the colloquium hosted a student research showcase, where XJTLU postgraduate students Chao Wang, Xuanming Zhang, Maoqing Ling, Yan Liu, and Pingyu Cao presented their recent work on GaN material engineering, device optimization, and simulation techniques. Their presentations reflected the strength of emerging talent in wide-bandgap semiconductor research at XJTLU.
The final keynote was delivered by Dr. Shuilin Tian, Senior Director of Product Design and Application at Innoscience Technology. His talk, “High-Frequency Application of GaN Power Devices”, provided a comprehensive comparison between GaN and traditional silicon power devices. He emphasized GaN’s advantages in bandgap (3.39 eV), breakdown field (10× Si), and electron mobility (1500 cm²/V·s), enabling ultra-low on-resistance and high switching frequencies. For instance, GaN devices have achieved 800 kHz switching in power banks with 97% efficiency, and significantly reduced device sizes (down to 1/4 of Si devices at 100 V rating). Through case studies in consumer electronics, data centers, and automotive systems, Dr. Tian highlighted the compactness, zero Qrr, low Qg, and thermal efficiency of integrated GaN solutions like InnoGaN™, noting future research directions such as dynamic Ron, threshold voltage stability, and paralleled device reliability.
Toward Deeper Collaboration in GaN Innovation: This colloquium served not only as a platform for academic exchange but also as a springboard for future collaboration between . Attendees expressed strong interest in strengthening the links between research, education, and industrial deployment in the GaN field. XJTLU will continue to promote interdisciplinary innovation in wide-bandgap semiconductors, fostering talent development, technological translation, and long-term partnership to support China’s next-generation semiconductor industry.
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- Xi’an Jiaotong-Liverpool University (XJTLU)
- 111 Ren’ai Road
- Suzhou, Jiangsu
- China 215123
- Building: IBSS Building
- Room Number: BS4114
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- Co-sponsored by XJTLU Adavanced Semiconductor Research Center (ASRC)
- Starts 07 July 2025 04:00 PM UTC
- Ends 11 July 2025 04:00 PM UTC
- No Admission Charge