FET100 "Semiconductor Devices and Passive Components Characterization for High Frequency Applications"

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IEEE Electron Devices Society (EDS)
Ninth Mexico Technical Meeting 2025 (MTM_9-2025)
Mexico Chapter and Cinvestav Zacatenco Student Branch Chapter
Center for Research and Advanced Studies of the National Polytechnic Institute, Mexico

 

 


The IEEE Electron Devices Society (EDS) Cinvestav Zacatenco Student Chapter, in collaboration with the Department of Electrical Engineering – Section of Solid-State Electronics (SEES), Cinvestav, is pleased to host this IEEE EDS Distinguished Lecture as part of the global FET100 campaign, celebrating 100 years of the Field Effect Transistor.

The event is open to students, researchers, and professionals interested in electronics, semiconductors, and solid-state devices.



  Date and Time

  Location

  Hosts

  Registration



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  • Avenida Instituto Politécnico Nacional 2508
  • Colonia San Pedro Zacatenco, Miguel Bernard La Escalera
  • Mexico City, Mexico
  • Mexico 07360
  • Building: Cinvestav
  • Room Number: Secretaría académica/Metodología y teoría...
  • Click here for Map

  • Contact Event Hosts
  • Anisleidy Broche Forte, Eng. ; anisleidy.broche.f@cinvestav.mx;

    Maricela Meneses Meneses, PhD. ; maricela.meneses.m@cinvestav.mx;

     

     

  • Co-sponsored by Department of Electrical Engineering – Section of Solid-State Electronics (SEES), Cinvestav, Mexico;
  • Starts 22 September 2025 06:00 AM UTC
  • Ends 27 November 2025 03:30 AM UTC
  • No Admission Charge


  Speakers

R. Murphy, PhD of Electronics Department INAOE

Topic:

“Advanced Electrostatic Discharge Technology Issues”

"Semiconductor Devices and Passive Components 
Characterization for High Frequency Applications "

presented by

Roberto S. Murphy Arteaga, PhD

Distinguished Lecturer, Electronics Department 
INAOE 
Tonantzintla, Puebla 

Abstract:

The development of integrated circuit manufacturing processes in the last few years has translated into ever smaller features for the elements they are comprised of, being now just 5 nm.  This enables the attainment of higher frequencies of operation, in the range of tens to hundreds of GHz.  Since modern processes are based on silicon, and circuits are designed mostly using CMOS technology, circuits can be designed and manufactured to operate with very low power, making them ideal for high-frequency, wireless communications with hand-held devices.  But besides having transistors, integrated circuits include passive devices such as inductors, capacitors, resistors, and interconnects, among others. Before sending a circuit to the fab, the designer has to be sure that it is going to work as desired, and thus its behavior has to be extensively simulated using computers.  In order to achieve trustworthy simulations, however, it is fundamental to have models —physical, mathematical, electrical— for each device and component, models which are obtained from individual characterization processes. This talk focuses on presenting some of the basic concepts of device characterization and modeling techniques for high-frequency applications, highlighting the second-order effects present in this frequency range, and suggesting a methodology to use to obtain trustworthy models for simulation routines.

 

Biography:

 

Roberto S. Murphy Arteaga, Ph.D. 

 

Dr. Roberto Murphy is a Full Researcher “C” at INAOE, where he has worked since 1988, associated with the Electronics Coordination. His field of interest focuses on high-frequency electronics, particularly on the physics, modeling, and characterization of devices for wireless communication applications.

In recent years, he has dedicated his work to the study, design, measurement, and modeling of antennas. Additionally, he has carried out administrative duties at INAOE for more than 18 years; he served as Director of Academic Training, Director of Research, and Head of the Electronics Department. He also served as Treasurer, Vice President, and President of the Mexican Council for Graduate Studies (COMEPO), and as a member of the Board of Directors and later President of the Iberoamerican Science and Technology Education Consortium (ISTEC), a non-profit academic organization based in Albuquerque, New Mexico, USA.

He has published more than 160 works in scientific journals, conferences, and proceedings, has taught over 100 postgraduate courses, and has supervised 38 graduate theses.

He is a Level 2 member of the National System of Researchers, a member of the Mexican Academy of Sciences, of the European Microwave Association, and a Senior Member of the Institute of Electrical and Electronics Engineers (IEEE), where he also serves as a Distinguished Lecturer for the Electron Devices Society (EDS).

Email:

Address:Puebla, Mexico





Agenda

MTM_9-2025 – Schedule

Time     Activity Speaker
12:30 – 12:35 Opening and Welcome Remarks Host and Facilitator
12:35 – 13:30 Semiconductor Devices and Passive Components 
Characterization for High Frequency Applications 
Roberto S. Murphy Arteaga, PhD. – Distinguished Lecturer



MTM_09-2025 is an IEEE-EDS-sponsored technical meeting. Co-sponsored by the Department of Electrical Engineering – Section of Solid-State Electronics at the Center for Research and Advanced Studies of the National Polytechnic Institute.