Celebration of the Field-Effect Transistor 100 years

#device #fets #mosfet #transistors #nanotechnology
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Lilienfeld instead of Lucia

IEEE Electron Devices Sweden invite you to a celebration of FET 100 years https://eds.ieee.org/about-eds/fet100-year-celebration

4 pm - 5 pm
- Professor Mikael Östling KTH introduces the seminar
- Professor Per-Erik Hellström KTH teaches the self-alignment process that allows a billion transistors or more, followed by a description of the KTH SOI process developed in the KTH clean room in Kista with features like high temperature operation and  transparent electronics
- Professor Mikael Östling describes the 3D integration process developed in the same clean room, and motivates the present focus on high voltage SiC MOSFETs, and then rounds off

5 pm - late
We visit the student pub hosted by QMISK in Electrum



  Date and Time

  Location

  Hosts

  Registration



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  • Semiconductor Arena
  • Kistagången 16
  • Kista, Stockholms lan
  • Sweden 16440
  • Building: Electrum

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  Speakers

Mikael Östling of KTH Royal Institute of Technology

Topic:

Introduction, 3D integration and SiC MOSFETs

An overview of the 3D integration process developed in the KTH clean room, followed by the present focus on high voltage SiC MOSFETs in industry.

Email:

Address:KTH EECS Electrum, Kistagången 16, Kista, Stockholms lan, Sweden, 16440

Per-Erik Hellström of KTH Royal Institute of Technology

Topic:

SOI and transparent electronics

The KTH SOI process developed in the KTH clean room in Kista with features like high temperature operation and  transparent electronics wil be presented.

Email:

Address:KTH EECS Electrum, Kistagången 16, Kista, Stockholms lan, Sweden, 16440