Celebration of the Field-Effect Transistor 100 years
Lilienfeld instead of Lucia
IEEE Electron Devices Sweden invite you to a celebration of FET 100 years https://eds.ieee.org/about-eds/fet100-year-celebration
4 pm - 5 pm
- Professor Mikael Östling KTH introduces the seminar
- Professor Per-Erik Hellström KTH teaches the self-alignment process that allows a billion transistors or more, followed by a description of the KTH SOI process developed in the KTH clean room in Kista with features like high temperature operation and transparent electronics
- Professor Mikael Östling describes the 3D integration process developed in the same clean room, and motivates the present focus on high voltage SiC MOSFETs, and then rounds off
5 pm - late
We visit the student pub hosted by QMISK in Electrum
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Speakers
Mikael Östling of KTH Royal Institute of Technology
Introduction, 3D integration and SiC MOSFETs
An overview of the 3D integration process developed in the KTH clean room, followed by the present focus on high voltage SiC MOSFETs in industry.
Email:
Address:KTH EECS Electrum, Kistagången 16, Kista, Stockholms lan, Sweden, 16440
Per-Erik Hellström of KTH Royal Institute of Technology
SOI and transparent electronics
The KTH SOI process developed in the KTH clean room in Kista with features like high temperature operation and transparent electronics wil be presented.
Email:
Address:KTH EECS Electrum, Kistagången 16, Kista, Stockholms lan, Sweden, 16440