Dr. Ariful Haque

The ultrawide bandgap (UWBG) semiconductor class (diamond, III-Nitrides, and oxides) has become essential to the post-COVID microelectronics landscape due to its ability to deliver faster, more efficient, and highly reliable electronic and power devices capable of operating under extreme voltages, temperatures, frequencies, and radiation environments where conventional semiconductors fall short. Despite their promise, UWBG semiconductors face significant scientific and engineering challenges that limit full device realization. Achieving controlled p- and n-type doping, managing heat in devices with exceptionally high power densities, forming low-defect heterointerfaces, and integrating dissimilar UWBG materials with compatible thermal and lattice properties remain major barriers that researchers are actively working to overcome. Our research group addresses these challenges through an integrated approach that combines advanced fabrication, conventional and emerging processing, defect and interface characterization, and AI-guided modeling and optimization of experiments. Ongoing projects in the lab are developing precise doping pathways for diamond and III-Nitrides, achieving low-resistance ohmic contacts, engineering low-defect diamond/oxide and diamond/III-nitride heterostructures, and improving thermal management through novel UWBG semiconductor stacks to offer practical solutions aligned with the needs of next-generation electronic and power devices. Altogether, this presentation will provide a comprehensive perspective on the scientific challenges and technological opportunities in UWBG semiconductor field with an emphasize on how integrated fabrication, processing, and characterization strategies can drive the development of high-efficiency, high-reliability electronic devices for the next era of microelectronics innovation.

Biography:

 Dr. Ariful Haque is an Assistant Professor of Electrical Engineering in the Ingram School of Engineering at Texas State University and a core faculty member in the Materials Science, Engineering & Commercialization (MSEC) Ph.D. program. Before joining Texas State, he garnered valuable industry experience at Intel Corporation in the Logic Technology Development (LTD) division, where he supported the development of next-generation semiconductor process technologies. Dr. Haque earned dual Ph.D. degrees in Electrical Engineering and in Materials Science & Engineering from North Carolina State University (NCSU). He also obtained a Master of Nanoengineering (specializing in nanoelectronics and nanophotonics) from NCSU, an M.S. in Materials Science from Missouri State University, and a B.Sc. in Electrical & Electronic Engineering from Bangladesh University of Engineering & Technology (BUET). Dr. Ariful Haque has secured and led multiple high-impact research grants that position his work at the forefront of ultrawide bandgap (UWBG) semiconductor innovation. Most notably, he is co-leading the NSF CREST Center for UWBG Semiconductor Device Materials. In addition, he serves as the principal investigator on several other Department of Defense (Army Research Office and Office of Naval Research) and NSF-funded projects in UWBG semiconductor field. He also leads several university-sponsored internal projects. Dr. Haque has authored over 60 peer-reviewed journal articles, including high-impact works in IEEE Transactions, alongside six conference proceedings and several book chapters. He also maintains a strong professional service portfolio, serving as an Associate Editor for the IEEE Electron Device Magazine and Frontiers in Carbon journal, a member of the IEEE Electronic Materials Technical Committee, an Advisory Board Member for Microelectronics-US 2026 in Austin, and an Organizing Committee member for the Electronic Materials Conference. He directs an active and growing research team that includes 2 postdoctoral researchers, 5 Ph.D. students, and 7 M.S. students.

Address:Bangladesh